In this work, self-heating effects (SHE) in nanometer-scale metal-oxide-semiconductor field-effect transistor structures—namely, FinFETs (FFs), nanosheet gate-all-around FETs (NSFs), and nanowire gate-all-around FETs (GAAFs)—are investigated via three-dimensional device electrothermal simulations using technology computer-aided design software tools. Initially, transistor design parameter values are set so that their on-state currents are similar for the same operating voltage (VDD). It is found that NSFs and GAAFs are more susceptible to SHE and that p-channel transistors have higher peak internal temperatures than do their n-channel counterparts due to the poor thermal conductivity of the silicon-germanium used as the p-type source/drain material. Subsequently, the on-state currents of FFs, NSFs, and GAAFs are compared under the constraint of identical peak internal temperature, which is required to ensure long-term reliability, revealing that NSFs and GAAFs offer no performance advantage over FFs under this constraint. Design optimization of p-channel NSFs for minimal SHE is subsequently investigated. It is found that with such optimization, NSFs operating at lower VDD (for similar SHE) can achieve similar on-state current as FFs.

中文翻译：

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亚 5 nm 节点纳米片场效应晶体管的设计优化，以最大限度地减少自热效应

在这项工作中，纳米级金属氧化物半导体场效应晶体管结构中的自热效应 (SHE)，即 FinFET (FF)、纳米片全环栅 FET (NSF) 和纳米线全栅场效应晶体管 (GAAF) 周围——使用技术计算机辅助设计软件工具通过三维器件电热模拟进行研究。最初，晶体管设计参数值被设置为使得它们的导通电流对于相同的工作电压 (VDD) 是相似的。发现 NSF 和 GAAF 更容易受到 SHE 的影响，并且由于用作 p 型源极/漏极的硅锗的导热性较差，因此 p 沟道晶体管的峰值内部温度高于它们的 n 沟道晶体管材料。随后，FFs、NSFs 的通态电流、和 GAAF 在相同峰值内部温度的约束下进行比较，这是确保长期可靠性所必需的，揭示了在此约束下 NSF 和 GAAF 没有比 FF 提供性能优势。随后研究了用于最小 SHE 的 p 通道 NSF 的设计优化。发现通过这种优化，在较低 VDD 下运行的 NSF（对于类似的 SHE）可以获得与 FF 类似的导通电流。