The exchange bias (EB) is an effect occurring in coupled ferromagnetic/antiferromagnetic materials of diverse shapes, from core–shell nanoparticles to stacked nanostructures and thin films. The interface coupling typically results in a horizontal—often also vertical—shift of the hysteresis loop, combined with an increased coercivity, as compared to the pure ferromagnet, and the possibility of asymmetric hysteresis loops. Several models have been developed since its discovery in 1956 which still have some drawbacks and some unexplained points, while exchange bias systems are at the same time being used in hard drive read heads and are part of highly important elements for spintronics applications. Here, we give an update of new theoretical models and experimental findings regarding exchange bias phenomena in thin films during the last years, including new material combinations in which an exchange bias was found.

中文翻译：

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薄膜中的交换偏见—更新

交换偏压（EB）是一种在各种形状的铁磁/反铁磁耦合材料中发生的效应，从核-壳纳米粒子到堆叠的纳米结构和薄膜。与纯铁磁体相比，界面耦合通常会导致磁滞回线的水平（通常也是垂直）位移，以及与纯铁磁体相比提高的矫顽力，以及非对称磁滞回线的可能性。自从1956年被发现以来，已经开发出了几种型号，这些型号仍然有一些缺点和一些无法解释的地方，而交换偏置系统同时用于硬盘驱动器读头中，并且是自旋电子学应用中非常重要的元素的一部分。在这里，我们提供了有关近年来薄膜交换偏斜现象的新理论模型和实验结果的更新，