Controlling magnetism by an electric field is of critical importance for the future development of ultralow-power electronic and spintronic devices. Progress has been made in electrically driven nonvolatile tuning of magnetic states in multiferroic heterostructures for the information storage industry, which is exclusively attributed to the ferroelectric-polarization-switching-induced interfacial charge effect or nonlinear lattice strain effect. Here, we demonstrate that a hitherto unappreciated shear strain in the ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ substrate triggered by an electric field can be adopted to obtain robust nonvolatile control of the ferromagnetic resonance in an elastically coupled epitaxial Fe₇₀Rh₃₀ thin film. The disappearance of the resonance peak in a low-field-sweeping mode and the large resonance field shift of 111 Oe upon polarization switching demonstrate a strong shear-strain-mediated magnetoelectric coupling effect. In particular, in situ Kerr measurement identifies that the nonvolatile magnetic switching purely originates from electric-field-induced 109° ferroelastic domain switching rather than from 71°/180° ferroelectric domain switching even without the assistance of a magnetic field. This discovery illustrates the role of shear strain in achieving electrically tunable nonvolatile modulation of dynamic magnetic properties, and favors the design of future energy-efficient magnetoelectric microwave devices.

通过电场控制磁性对于超低功率电子和自旋电子设备的未来发展至关重要。在信息存储行业中，多铁异质结构中的电驱动非易失性磁态调谐已经取得了进展，这完全归因于铁电极化转换引起的界面电荷效应或非线性晶格应变效应。在这里，我们证明了可以采用电场触发铁电体0.7Pb（Mg _1/3 Nb _2/3）O ₃ –0.3PbTiO ₃衬底中迄今未曾意识到的剪切应变来获得鲁棒的铁磁谐振的稳健非易失性控制。弹性耦合外延Fe ₇₀Rh ₃₀薄膜。在低场扫描模式下共振峰的消失和极化转换时111 Oe的大共振场位移表现出很强的剪切应变介导的磁电耦合效应。尤其是，原位Kerr测量表明，即使没有磁场，非易失性磁性开关也纯粹是由电场引起的109°铁电畴切换，而不是来自71°/ 180°铁电畴切换。这一发现说明了剪切应变在实现动态磁特性的电可调非易失性调制中的作用，并有利于未来节能型磁电微波器件的设计。