A broadband substrate‐integrated waveguide (SIW)‐fed endfire metasurface antenna array with improved gain centralisation radiation pattern is proposed in this paper. The metasurface is composed of 3 × 3 rectangular patches distributed on both the upper and lower sides of a single‐layer substrate. For wideband endfire radiation, an open‐end SIW on the metasurface side feeds the antenna. To improve front to back radiation and ration matching characteristics, one C‐shaped slot is etched on the top surface of SIW. Two L‐shaped metal walls composed of metalized via holes are employed to centralize radiation pattern and reduce both the side lobe and back lobe levels. In addition, the gain of the antenna is enhanced more than 1.6 dBi. To validate this design, a 1 × 8 uniform excitation array is proposed and fabricated, containing three SIW T junctions and four Y junctions. The whole dimension is 7.33λ₀× 3.82λ₀ × 0.06λ₀. Measurement results imply that an 7.5 to 13.05 GHz (54%) impedance bandwidth can be achieved with the maximum gain of 14.9 dBi.

中文翻译：

---

具有增益增强功能的宽带基片集成波导馈电端射超表面天线阵列

本文提出了一种宽带基片集成波导（SIW）馈入的端射超表面天线阵列，其增益集中辐射方向图得到了改善。超颖表面由分布在单层基板上下两面的3×3矩形斑块组成。对于宽带端射辐射，超表面一侧的开放式SIW为天线供电。为了改善前后辐射和定量配比的特性，在SIW的顶面上刻有一个C形槽。两个由金属化通孔组成的L形金属壁用于集中辐射图并降低旁瓣和后瓣水平。此外，天线的增益提高了1.6 dBi以上。为了验证该设计，采用1×8提出并制造了包含三个SIW T结和四个Y结的均匀激励阵列。整个尺寸是7.33λ ₀ ×3.82λ ₀  ×0.06λ ₀。测量结果表明，最大增益为14.9 dBi时，可以获得7.5至13.05 GHz（54％）的阻抗带宽。