Discovery of a New Intermediate Enables One‐Step Deposition of High‐Quality Perovskite Films via Solvent Engineering,Solar RRL

当前位置： X-MOL 学术 › Solar RRL › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Discovery of a New Intermediate Enables One‐Step Deposition of High‐Quality Perovskite Films via Solvent Engineering
Solar RRL ( IF 6.0 ) Pub Date : 2021-01-22 , DOI: 10.1002/solr.202000712
Chen Hu ₁ , Sunil B. Shivarudraiah ₁ , Herman H. Y. Sung ₁ , Ian D. Williams ₁ , Jonathan E. Halpert ₁ , Shihe Yang _{1,

2}

Affiliation

Bromide‐based organo‐metal halide perovskites have shown great potential for use in tandem solar cells (SCs), light‐emitting diodes (LEDs), and photodetectors. Herein, a new protocol using a one‐step deposition method for producing formamidinium lead bromide (FAPbBr₃) perovskites is reported, which features a solvent‐engineered intermediate phase to achieve superior films. For the first time, a FABr–PbBr₂–DMSO intermediate is identified and single crystals of the same intermediate compound are synthesized. A systematic investigation of phase evolution in the film formation process reveals that DMSO enables crystallization of the FABr–PbBr₂–DMSO intermediate and thus modulates the crystallization process of FAPbBr₃ perovskite, achieving uniform, smooth films with Volmer–Weber morphology. To prevent hole leakage arising from the larger bandgap of FAPbBr₃ than FAPbI₃, an additional layer of Mg‐doped ZnO nanoparticles is added. As a result, inverted SCs using these solvent engineered films achieve power conversion efficiencies (PCEs) of up to 9.06%, the highest reported efficiency for inverted FAPbBr₃ perovskite devices.

中文翻译：

发现新的中间体可通过溶剂工程一步沉积高质量的钙钛矿薄膜

基于溴化物的有机金属卤化物钙钛矿具有巨大的潜力，可用于串联太阳能电池（SC），发光二极管（LED）和光电探测器。本文报道了一种采用一步沉积法生产甲酰胺基溴化铅（FAPbBr ₃）钙钛矿的新方案，该方案具有溶剂工程化的中间相，可实现优异的薄膜。首次鉴定出FABr-PbBr ₂ -DMSO中间体，并合成了相同中间体化合物的单晶。对成膜过程中相演变的系统研究表明，DMSO可使FABr–PbBr ₂ –DMSO中间体结晶，从而调节FAPbBr ₃的结晶过程钙钛矿，获得具有沃尔默-韦伯形态的均匀，光滑的薄膜。为了防止由于FAPbBr _3的带隙比FAPbI ₃大的带隙而引起的空穴泄漏，增加了一层掺Mg的ZnO纳米颗粒。结果，使用这些溶剂工程膜的倒置SC的功率转换效率（PCE）高达9.06％，这是倒置FAPbBr ₃钙钛矿器件报道的最高效率。

更新日期：2021-01-22

点击分享查看原文

点击收藏

阅读更多本刊最新论文