Ion implantation is a fundamental processing step in electronic device manufacturing. However, it can give rise to electrically active defects, in the crystal, that can undermine the functionality of devices. In this study, we carried out an electrical characterization study of defects in ion implanted n-type GaN. We found several levels in the 0.2–1.2 eV below the conduction band edge. The nature of these defects is discussed in the light of the ion mass, tilt angle and dose dependence of the concentration of the detected levels.

中文翻译：

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离子注入n型同质外延GaN中的深能级：离子质量，倾斜角和剂量依赖性

离子注入是电子设备制造中的基本处理步骤。但是，它会在晶体中引起电活性缺陷，从而破坏器件的功能。在这项研究中，我们进行了离子注入n型GaN中缺陷的电特性研究。我们在导带边缘以下0.2–1.2 eV中发现了几个电平。这些缺陷的性质是根据​​离子质量，倾斜角和检测水平浓度的剂量依赖性来讨论的。