In this paper, 2,2′-bipyridine (BPY) was used as a chemical modifier to prepare the La_0.67Ca_0.33MnO₃ (LCMO) UV-sensitive sol. The LCMO film was micro-fabricated by the UV-sensitivity of sol, which resulted in LCMO patterns with micron-scale microstructures. The micro-fabrication method was further applied in the preparation of LCMO dot array on the Nb:SrTiO₃ (NSTO) substrate to form In/LCMO/NSTO heterostructure. The I-V curve of the In/LCMO/NSTO structure exhibited an obvious I-V hysteresis window which indicated that the resistive switching (RS) effect occurred. It is analyzed that the RS effect results from the barriers change at the In/LCMO and LCMO/NSTO interfaces. Further tests revealed that the In/LCMO/NSTO structure could exhibited two different I-V characteristics when the limiting current was 1 and 10 mA respectively, and the mechanisms with these two different limiting currents are analyzed based on the interface barrier, Space-charge-limited current mechanism and Fowler-Nordheim tunneling mechanism.

本文以2,2'-联吡啶（BPY）为化学改性剂，制备了La _0.67 Ca _0.33 MnO ₃（LCMO）紫外线敏感溶胶。LCMO膜是通过溶胶的UV敏感性进行微制造的，从而产生具有微米级微结构的LCMO图案。将该微细加工方法进一步应用于在Nb：SrTiO ₃（NSTO）衬底上制备LCMO点阵列，以形成In / LCMO / NSTO异质结构。In / LCMO / NSTO结构的I - V曲线显示出明显的IV表示发生电阻切换（RS）效果的磁滞窗口。分析表明，RS效应是由In / LCMO和LCMO / NSTO接口处的势垒变化引起的。进一步的测试表明，当极限电流分别为1和10 mA时，In / LCMO / NSTO结构可以表现出两种不同的IV特性，并基于界面势垒，空间电荷极限来分析具有两种不同极限电流的机理。电流机制和Fowler-Nordheim隧穿机制。