This work is focused on band structure engineering and optical proprieties of GaSbBi/GaSb type I quantum well mid-infrared laser structure on GaSb substrate. Wherefore, the band alignment is tailored and optoelectronic properties are investigated for the proposed structure based on GaSb_1−xBi_x/GaSb hetero-interfaces in the range of alloy compositions between $0\le \mathrm{x}\le 0.14$. The electron and holes effective masses are deduced from the expressions extracted from the k.p model. The laser structure is designed to function at 2.7 μm at room temperature (RT), the addition of bismuth into the GaSb active region improve a preferment optical gain and the threshold current density (J_th) including computation of radiative, non radiative and Auger recombination. For typical carrier injection $5\times {10}^{18}{\mathrm{c}\mathrm{m}}^{-3}$at 300 k peak gain value of the order of 2000 cm⁻¹ are reached and a modal gain equal to 96 cm⁻¹ can be attained. A J_th around1.2 kA/cm² is expected through moderate optical losses.

这项工作集中在GaSbBi / GaSb I型量子阱中红外激光器在GaSb衬底上的能带结构工程和光学特性。因此，根据GaSb _1-x Bi _x / GaSb异质界面在合金组成之间的范围内，调整了能带排列并研究了所提出结构的光电性能。$0\le \mathrm{X}\le 0.14$。根据从kp模型提取的表达式推导电子和空穴的有效质量。激光器结构设计为在室温（RT）时工作于2.7μm，将铋添加到GaSb有源区中可改善首选光学增益和阈值电流密度（J _th），包括计算辐射，非辐射和俄歇复合。对于典型的载流子注入$5\times {10}^{\mathrm{18岁}}{\mathrm{C}\mathrm{米}}^{--3}$在300 k时，达到2000 cm ^-1量级的峰值增益值，并且可以获得等于96 cm ^-1的模态增益。AJ_第around1.2 kA的/厘米²通过适中的光学损失的预期。