Based on low-temperature high-permeability grain-oriented silicon steel designed with an initial nitrogen content of 0.0055% and produced by the thin slab casting and rolling process, the effect of total nitrogen content and nitriding temperature on primary recrystallization microstructure and texture were studied by optical microscope, scanning electron microscope, transmission electron microscope, and electron backscatter diffraction. The nitriding temperature affects the primary recrystallization behaviors significantly, while the total nitrogen content has a small effect. As the nitriding temperature is 750–850 °C, the average primary grain size and its inhomogeneity factor are about 26.58–26.67 μm and 0.568–0.572, respectively. Moreover, the texture factor is mostly between 0.15 and 0.40. Because of the relatively sufficient inhibition ability of inherent inhibitors in a decarburized sheet, the nitriding temperature (750–850 °C) affects the primary recrystallization microstructure and texture slightly. However, as the nitriding temperature rises to 900–950 °C, the average primary grain size and its inhomogeneity factor increase to 27.75–28.26 μm and 0.575–0.578, respectively. Furthermore, because of the great increase on the area fraction of {112} <110> grains, part of texture factor is increased sharply. Therefore, in order to obtain better primary grain size and homogeneity, better texture composition, and stability of the decarburized sheet, the optimal nitriding temperature is 750–850 °C.

中文翻译：

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薄板坯连铸连轧产生的具有较低初始氮的Hi-B钢的初次再结晶行为

以薄板坯连铸连轧生产的初始氮含量为0.0055％的低温高磁导方向取向硅钢为基础，研究了总氮含量和氮化温度对初次再结晶组织和织构的影响。通过光学显微镜，扫描电子显微镜，透射电子显微镜和电子背散射衍射。氮化温度对初次再结晶行为有显着影响，而总氮含量影响很小。当氮化温度为750–850°C时，平均一次晶粒尺寸及其不均匀性因子分别约为26.58–26.67μm和0.568–0.572。而且，纹理因子大部分在0.15和0.40之间。由于脱碳板中固有抑制剂的抑制能力相对较高，因此渗氮温度（750–850°C）对初次重结晶的微观结构和织构有轻微影响。但是，随着氮化温度上升到900-950°C，平均一次晶粒度及其不均匀性系数分别增加到27.75-28.26μm和0.575-0.578。此外，由于{112} <110>晶粒的面积分数大大增加，部分纹理因子急剧增加。因此，为了获得更好的一次晶粒尺寸和均匀性，更好的织构组成以及脱碳板的稳定性，最佳氮化温度为750–850°C。氮化温度（750–850°C）对初次再结晶的微观结构和织构有轻微影响。但是，随着氮化温度上升到900-950°C，平均一次晶粒度及其不均匀性系数分别增加到27.75-28.26μm和0.575-0.578。此外，由于{112} <110>晶粒的面积分数大大增加，部分纹理因子急剧增加。因此，为了获得更好的一次晶粒尺寸和均匀性，更好的织构组成以及脱碳板的稳定性，最佳氮化温度为750–850°C。氮化温度（750–850°C）对初次再结晶的微观结构和织构有轻微影响。但是，随着氮化温度上升到900-950°C，平均一次晶粒度及其不均匀性系数分别增加到27.75-28.26μm和0.575-0.578。此外，由于{112} <110>晶粒的面积分数大大增加，部分纹理因子急剧增加。因此，为了获得更好的一次晶粒尺寸和均匀性，更好的织构组成以及脱碳板的稳定性，最佳氮化温度为750–850°C。由于{112} <110>晶粒的面积分数大大增加，部分织构因子急剧增加。因此，为了获得更好的一次晶粒尺寸和均匀性，更好的织构组成以及脱碳板的稳定性，最佳氮化温度为750–850°C。由于{112} <110>晶粒的面积分数大大增加，部分织构因子急剧增加。因此，为了获得更好的一次晶粒尺寸和均匀性，更好的织构组成以及脱碳板的稳定性，最佳氮化温度为750–850°C。