Additive Lithography–Organic Monolayer Patterning Coupled with an Area-Selective Deposition,ACS Applied Materials & Interfaces

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Additive Lithography–Organic Monolayer Patterning Coupled with an Area-Selective Deposition
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-01-20 , DOI: 10.1021/acsami.0c16817
Rudy Wojtecki ₁ , Jonathan Ma ₂ , Isvar Cordova ₂ , Noel Arellano ₁ , Krystelle Lionti ₁ , Teddie Magbitang ₁ , Thomas G. Pattison ₃ , Xiao Zhao _{4,

5} , Eugene Delenia ₁ , Nicholas Lanzillo ₆ , Alexander E. Hess ₁ , Noah Fine Nathel ₁ , Holt Bui ₁ , Charles Rettner ₁ , Gregory Wallraff ₁ , Patrick Naulleau ₂

Affiliation

The combination of area-selective deposition (ASD) with a patternable organic monolayer provides a versatile additive lithography platform, enabling the generation of a variety of nanoscale feature geometries. Stearate hydroxamic acid self-assembled monolayers (SAMs) were patterned with extreme ultraviolet (λ = 13.5 nm) or electron beam irradiation and developed with ASD to achieve line space patterns as small as 50 nm. Density functional theory was employed to aid in the synthesis of hydroxamic acid derivatives with optimized packing density to enhance the imaging contrast and improve dose sensitivity. Near-edge X-ray absorption fine structure spectroscopy and infrared spectroscopy reveal that the imaging mechanism is based on improved deposition inhibition provided by the cross-linking of the SAM to produce a more effective barrier during a subsequent deposition step. With patterned substrates composed of coplanar copper lines and silicon spacers, hydroxamic acids selectively formed monolayers on the metal portions and could undergo a pattern-wise exposure followed by ASD in the first combination of a patternable monolayer with ASD. This material system presents an additional capability compared to traditional ASD approaches that generally reflect a starting patterned surface. Furthermore, this bottoms-up additive approach to lithography may be a viable alternative to subtractive nanoscale feature generation.

中文翻译：

加法光刻法-有机单层图案与区域选择性沉积相结合

区域选择性沉积（ASD）与可构图的有机单层膜的结合提供了通用的加法光刻平台，从而能够生成各种纳米级特征几何图形。硬脂酸异羟肟酸自组装单分子层（SAMs）用极紫外（λ= 13.5 nm）或电子束辐照进行图案化，并用ASD显影，以实现小至50 nm的线间距图案。密度泛函理论用于协助合成具有最佳堆积密度的异羟肟酸衍生物，以增强成像对比度并提高剂量敏感性。近边缘X射线吸收精细结构光谱学和红外光谱学表明，成像机理基于由SAM的交联提供的改善的沉积抑制作用，以在后续沉积步骤中产生更有效的阻挡层。利用由共面铜线和硅间隔物组成的图案化基板，异羟肟酸在金属部分上选择性地形成单层，并且可以进行图案化曝光，然后在可图案化单层与ASD的第一组合中进行ASD。与通常反映初始图案化表面的传统ASD方法相比，该材料系统具有额外的功能。此外，这种自下而上的光刻微加方法可能是纳米相减特征生成的可行替代方法。利用由共面铜线和硅间隔物组成的图案化基板，异羟肟酸在金属部分上选择性地形成单层，并且可以进行图案化曝光，然后在可图案化单层与ASD的第一组合中进行ASD。与通常反映初始图案化表面的传统ASD方法相比，该材料系统具有额外的功能。此外，这种自下而上的微影加法方法可能是纳米相减特征消减的可行替代方法。利用由共面铜线和硅间隔物组成的图案化基材，异羟肟酸在金属部分上选择性地形成单层，并且可以进行图案化曝光，然后在可图案化单层与ASD的第一组合中进行ASD。与通常反映初始图案化表面的传统ASD方法相比，该材料系统具有额外的功能。此外，这种自下而上的光刻微加方法可能是纳米相减特征生成的可行替代方法。与通常反映初始图案化表面的传统ASD方法相比，该材料系统具有额外的功能。此外，这种自下而上的微影加法方法可能是纳米相减特征消减的可行替代方法。与通常反映初始图案化表面的传统ASD方法相比，该材料系统具有额外的功能。此外，这种自下而上的微影加法方法可能是纳米相减特征消减的可行替代方法。

更新日期：2021-02-24

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