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A quasi‐Z‐source inverter with a single high‐frequency‐switch
International Transactions on Electrical Energy Systems ( IF 1.9 ) Pub Date : 2021-01-21 , DOI: 10.1002/2050-7038.12768 Mohammad Mohammadi 1, 2 , Afshin Mirzaee 1 , Javad S. Moghani 1 , Jafar Milimonfared 1 , Mehdi Zarei Tazehkand 1
International Transactions on Electrical Energy Systems ( IF 1.9 ) Pub Date : 2021-01-21 , DOI: 10.1002/2050-7038.12768 Mohammad Mohammadi 1, 2 , Afshin Mirzaee 1 , Javad S. Moghani 1 , Jafar Milimonfared 1 , Mehdi Zarei Tazehkand 1
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In this paper, a high efficiency quasi‐Z‐source inverter with a single high‐frequency switch is proposed to achieve a high efficiency and more compact topology. The converter utilizes a single high‐speed GaN FET. In the proposed converter, four switches operate with low frequency sinusoidal pulse width modulation while the fifth switch short circuits the inverter switch‐legs with a high switching frequency and prepares the shoot‐through current path. The operation of the fifth switch in high switching frequency helps the inverter to operate with modulation index equal to unity. Also, the impedance network operates in high switching frequency, which makes it possible to decrease the components' size. The operation principles, efficiency, and switches' losses of the proposed converter are investigated analytically. A comparison between theoretical and simulation results is performed to validate the theoretical description of the inverter. To validate the well‐behavior of the inverter under various operation modes, the performance of the proposed converter is examined under different types of load. Moreover, loss breakdown and efficiency comparisons are utilized to show improvements with respect to the conventional inverter. The performance of the converter has been examined and validated through a 300 W prototype of the inverter.
中文翻译：
具有单个高频开关的准Z源逆变器
本文提出了一种具有单个高频开关的高效率准Z源逆变器，以实现高效率和更紧凑的拓扑结构。该转换器利用单个高速GaN FET。在建议的转换器中，四个开关采用低频正弦脉冲宽度调制操作，而第五个开关则以高开关频率使逆变器开关支脚短路，并准备直通电流路径。第五开关在高开关频率下的操作有助于逆变器以等于1的调制指数运行。而且，阻抗网络以高开关频率工作，这使得可以减小元件的尺寸。对所提出的转换器的工作原理，效率和开关损耗进行了分析研究。将理论结果与仿真结果进行比较，以验证逆变器的理论描述。为了验证逆变器在各种运行模式下的良好性能，在不同负载类型下检查了所建议的转换器的性能。而且，利用损耗击穿和效率比较来显示相对于常规逆变器的改进。转换器的性能已通过300 W逆变器原型进行了检查和验证。利用损耗击穿和效率比较来显示相对于常规逆变器的改进。转换器的性能已通过300 W逆变器原型进行了检查和验证。利用损耗击穿和效率比较来显示相对于常规逆变器的改进。转换器的性能已通过300 W逆变器原型进行了检查和验证。
更新日期：2021-03-02
中文翻译：
具有单个高频开关的准Z源逆变器
本文提出了一种具有单个高频开关的高效率准Z源逆变器，以实现高效率和更紧凑的拓扑结构。该转换器利用单个高速GaN FET。在建议的转换器中，四个开关采用低频正弦脉冲宽度调制操作，而第五个开关则以高开关频率使逆变器开关支脚短路，并准备直通电流路径。第五开关在高开关频率下的操作有助于逆变器以等于1的调制指数运行。而且，阻抗网络以高开关频率工作，这使得可以减小元件的尺寸。对所提出的转换器的工作原理，效率和开关损耗进行了分析研究。将理论结果与仿真结果进行比较，以验证逆变器的理论描述。为了验证逆变器在各种运行模式下的良好性能，在不同负载类型下检查了所建议的转换器的性能。而且，利用损耗击穿和效率比较来显示相对于常规逆变器的改进。转换器的性能已通过300 W逆变器原型进行了检查和验证。利用损耗击穿和效率比较来显示相对于常规逆变器的改进。转换器的性能已通过300 W逆变器原型进行了检查和验证。利用损耗击穿和效率比较来显示相对于常规逆变器的改进。转换器的性能已通过300 W逆变器原型进行了检查和验证。
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