A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field and thus upgrades the photoresponsivity and photodetectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm² which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81 × 10¹¹ cm·Hz^1/2 W⁻¹. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the nonlinear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light-trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

在这项研究中展示了对弱光的末端键合InAsSb NW（纳米线）阵列检测器的简单制造方法。该检测器使用通过分子束外延在GaAs衬底上生长的InAsSb NW阵列制造。金属感生的间隙状态是由端键接触引起的，该端键接触抑制了各种温度下的暗电流。由于界面间隙状态的存在，界面偶极子的存在增强了局部场周围的光激发，从而提高了对弱光的光响应性和光探测性。本报告中红外光源的光强度为14 nW / cm ²比激光光源小3至4个数量级。在室温（945 nm）辐射下，检测器的响应度已达到28.57 A / W，而检测度为4.81×10 ¹¹  cm·Hz ^1/2  W ^-1。在可变温度实验中出现了异常的温度相关性能，我们讨论了器件光响应与温度之间非线性关系背后的详细机理。此外，检测器的光电特性表明，NW的光捕获效应和光闸效应可以增强对弱光的响应，该弱光跨越紫外到近红外。这些结果凸显了InAsSb NW阵列检测器对不带冷却系统的红外弱光的可行性。