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Thiophene-based twisted bistricyclic aromatic ene with tricoordinate boron: a new n-type semiconductor
Chemical Communications ( IF 4.9 ) Pub Date : 2021-1-13 , DOI: 10.1039/d0cc07952a
Yohei Adachi 1, 2, 3, 4, 5 , Takanori Nomura 1, 2, 3, 4, 5 , Shion Tazuhara 5, 6, 7, 8, 9 , Hiroyoshi Naito 5, 6, 7, 8, 9 , Joji Ohshita 1, 2, 3, 4, 5
Affiliation  

The incorporation of tricoordinate boron into conjugated systems is of current interest in the field of organic electronics. In this study, a tricoordinate boron-embedded thiophene-based bistricyclic aromatic ene (BAE) was synthesized as a new boron-containing conjugated system. The combination of tricoordinate boron and fused thiophene rings imposed the twisted conformation in the BAE structure, resulting in the narrow energy absorption with the low-lying LUMO. Preliminary studies on the application of the highly electron-deficient boron-embedded BAE to organic field-effect transistors (OFETs) were also performed, revealing its moderately high electron mobility.

中文翻译:

具有三配位硼的噻吩基双双环芳族芳香烯:一种新型的n型半导体

在有机电子领域中,将三配位硼结合到共轭体系中是当前的关注点。在这项研究中,三坐标嵌入硼的噻吩基双三环芳香烯(BAE)被合成为一种新型的含硼共轭体系。三配位硼和稠合的噻吩环的组合在BAE结构中施加了扭曲的构象,从而导致低位LUMO的能量吸收狭窄。还进行了将高度缺电子的硼嵌入BAE应用于有机场效应晶体管(OFET)的初步研究,揭示了其适度的高电子迁移率。
更新日期:2021-01-20
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