We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM₀₀) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <−130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

中文翻译：

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InGaN二极管泵浦AlGaInP VECSEL，在689 nm处具有亚kHz的线宽

我们报告了基于AlGaInP的VECSEL的设计，生长和表征，该VECSEL被设计为用廉价的高功率蓝色InGaN二极管激光器进行光泵浦，可发射约689 nm的光。圆对称单横向（TEM ₀₀）可获得高达140 mW的输出功率）和单纵模，可在683至693 nm范围内可调。通过泵浦二极管的强度稳定化和通过Pound-Drever-Hall技术将VECSEL谐振器对参考腔的频率稳定化，我们可以测量VECSEL频率噪声的功率谱密度，报告689 nm处的亚kHz线宽。对于高于100 kHz的所有频率，VECSEL相对强度噪声（RIN）小于-130 dBc / Hz。这种紧凑的激光系统适用于量子技术，特别是基于激光冷却和俘获的锶原子的量子技术。