Anomalous Photoelectrical Properties through Strain Engineering Based on a Single Bent InAsSb Nanowire,ACS Applied Materials & Interfaces

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Anomalous Photoelectrical Properties through Strain Engineering Based on a Single Bent InAsSb Nanowire
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-01-20 , DOI: 10.1021/acsami.0c16028
Xiaomei Yao _{1,

2} , Xutao Zhang _{1,

3} , Qiang Sun , Dongdong Wei ₁ , Pingping Chen _{1,

2} , Jin Zou

Affiliation

In this study, electrical and photoresponse properties of bent InAsSb nanowires (NWs) were investigated to explore the impact of bending strain on the photoelectrical properties. The corresponding morphological and structural observations demonstrate the phase segregation and strain in the core–shell zinc-blende-structured InAsSb NWs. It is found that the device made of bent InAsSb individual NW presents the switch from negative photoconductivity (NPC) and positive photoconductivity (PPC). The transformation between NPC and PPC can be achieved by not only gate voltage but also bias voltage, indicating the potential in the pervasive computing of bent InAsSb NWs. This work combines the semiconductor properties, light excitation, and piezoelectric effect of the InAsSb NWs, providing new ideas for next-generation photoelectrical nanodevices.

中文翻译：

通过单根弯曲的InAsSb纳米线的应变工程获得异常的光电性能

在这项研究中，对弯曲的InAsSb纳米线（NWs）的电和光响应特性进行了研究，以探讨弯曲应变对光电特性的影响。相应的形态和结构观察表明，核-壳共混锌结构的InAsSb NWs中存在相分离和应变。已发现，由弯曲的InAsSb单个NW制成的器件呈现出从负光电导（NPC）和正光电导（PPC）的切换。NPC和PPC之间的转换不仅可以通过栅极电压来实现，还可以通过偏置电压来实现，这表明了在弯曲InAsSb NW的普遍计算中的潜力。这项工作结合了InAsSb NW的半导体特性，光激发和压电效应，为下一代光电纳米器件提供了新的思路。

更新日期：2021-02-03

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