This paper describes an air cavity quad-flat no-leads (QFN) over-molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage QFN packaged GaN LNA MMIC achieves a bandwidth of 0.03–2.6 GHz with a typical gain of 11.5 dB and less than 1.5 dB noise figure. The low noise amplifier (LNA) design is based on a model of a concept transistor, the cascode transistor used in the design, that has not been fabricated previously. The concept transistor is fabricated for the first time along with the GaN LNA MMIC. The fabricated GaN LNA MMIC is housed in a 12-lead 3 × 3 mm² air cavity QFN over-molded plastic package and mounted on an application board. The measurements taken with the application board represent a good convergence with the design that is based on a concept transistor model. The measurement results and 50 Ω internal matching on both ports without the need for additional matching components make this LNA attractive for many applications.

中文翻译：

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从模型到低噪声放大器单片微波集成电路：0.03-2.6 GHz塑料四方扁平无引线封装氮化镓低噪声放大器单片微波集成电路

本文介绍了一种采用 0.25 μm GaN HEMT 技术制造的具有电阻反馈的气腔四方扁平无引线 (QFN) 包覆成型塑料封装共源共栅宽带 GaN LNA 单片微波集成电路 (MMIC)。单级 QFN 封装的 GaN LNA MMIC 实现了 0.03–2.6 GHz 的带宽，典型增益为 11.5 dB，噪声系数小于 1.5 dB。低噪声放大器 (LNA) 设计基于概念晶体管模型，即设计中使用的共源共栅晶体管，该模型之前尚未制造。概念晶体管首次与 GaN LNA MMIC 一起制造。制造的 GaN LNA MMIC 封装在 12 引线 3 × 3 mm ²气腔 QFN 包覆成型塑料封装并安装在应用板上。使用应用板进行的测量表明与基于概念晶体管模型的设计具有良好的收敛性。无需额外匹配组件的情况下，两个端口的测量结果和 50 Ω 内部匹配使该 LNA 对许多应用具有吸引力。