Influence of double bonds and cyclic structure on the AP‐PECVD of low‐k organosilicon insulating layers,Plasma Processes and Polymers

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Influence of double bonds and cyclic structure on the AP‐PECVD of low‐k organosilicon insulating layers
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2021-01-20 , DOI: 10.1002/ppap.202000222
Dominique Abessolo Ondo _{1,

2} , François Loyer ₁ , Nicolas D. Boscher ₁

Affiliation

The influence of the monomer's structure on the growth mechanisms and performances of low dielectric constant insulating thin films elaborated from the atmospheric‐pressure plasma‐enhanced chemical vapour deposition reaction of three different tetrasiloxane compounds is elucidated. The presence of vinyl bonds enables free‐radical polymerisation and surface reaction pathways, which is strongly favoured from the combination of ultrashort plasma pulses (ca. 100 ns), as polymerisation initiator, with long plasma off‐times (10 ms) to yield the formation of atomically smooth thin films with excellent insulating properties (in the range of 10⁻⁷ A·cm⁻²).

中文翻译：

双键和环状结构对低k有机硅绝缘层AP-PECVD的影响

阐明了单体结构对三种不同的四硅氧烷化合物的大气压等离子体增强化学气相沉积反应制得的低介电常数绝缘薄膜的生长机理和性能的影响。乙烯基键的存在使自由基聚合和表面反应途径得以实现，超短等离子体脉冲（约100 ns）（作为聚合引发剂）与较长的等离子体关闭时间（10毫秒）相结合可极大地促进自由基聚合和表面反应途径的产生。形成具有优异绝缘性能（在10 ^-7 A·cm ^-2的范围内）的原子光滑薄膜。

更新日期：2021-03-04

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