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Influence of the deposition temperature on the optical and electrical properties of TiN film by spectroscopic ellipsometry
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2021-01-20 , DOI: 10.1016/j.spmi.2021.106815
Qunchao Ma , Xinwei Shi , Longtao Bi , Jing Li , Qiang Zhou , Bailin Zhu

Low emission (Low-e) films are widely used in modern architectural glass. In this presentation, spectroscopic ellipsometry (SE) between 1.12 and 2.75 eV (wavelength range: 450–1100 nm) was used to investigate the temperature dependence of dielectric function of TiN films. A Drude-3Lorentz dispersion model was selected and the results show both the real part ε1 and the imaginary part ε2 increase with the deposition temperature increasing. The structure and performance of the obtained TiN samples were characterized by X-ray diffraction, Raman, scanning electron microscope, UV/Visible (UV/VIS) spectrophotometer and Hall measurements. Combining the measured results, it is found that with the deposition temperature increasing, the grain size of TiN film changed from 15.4 nm to 17.4 nm and the surface becomes rougher. The concentrations of titanium and nitrogen vacancies decrease with increasing deposition temperature. A combined Drude-3Lorentz model was used to analyze the dielectric and optical properties of the obtained TiN films. It is found that TiN samples exhibit typical Drude-Lorentz like behavior in the visible and near-infrared (NIR) regions. The results were verified by Hall measurements and UV/VIS measurements. With the deposition temperature increasing, the reflectivity increased in the NIR region and a peak reflectivity of about 93% can be obtained at the wavelength of 1000 nm. With the deposition increasing, the infrared emissivity decreased. The infrared emissivities of the TiN film deposited at 673 K are 0.26 and 0.08 at wavelength of 2.5 μm and 25 μm, respectively, which shows TiN may be a good candidate for low-e film.



中文翻译:

椭偏光谱法研究沉积温度对TiN薄膜光学和电学性质的影响

低辐射(Low-e)膜广泛用于现代建筑玻璃中。在本演示中,使用了介于1.12和2.75 eV(波长范围:450-1100 nm)之间的椭圆偏振光谱(SE)来研究TiN薄膜介电功能的温度依赖性。选择了Drude-3Lorentz色散模型,结果显示了真实部分ε1个 和虚部 ε2随着沉积温度的增加而增加。通过X射线衍射,拉曼光谱,扫描电子显微镜,紫外/可见光(UV / VIS)分光光度计和霍尔测量来表征所得TiN样品的结构和性能。结合测量结果,发现随着沉积温度的升高,TiN膜的晶粒尺寸从15.4 nm变为17.4 nm,表面变得更粗糙。钛和氮空位的浓度随着沉积温度的升高而降低。使用组合的Drude-3Lorentz模型分析所得TiN薄膜的介电和光学性能。发现TiN样品在可见光和近红外(NIR)区域表现出典型的Drude-Lorentz行为。通过霍尔测量和UV / VIS测量验证了结果。随着沉积温度的升高,NIR区域的反射率增加,并且在1000 nm的波长下可获得约93%的峰值反射率。随着沉积的增加,红外发射率下降。在673 K处沉积的TiN薄膜在2.5μm和25μm的波长下的红外发射率分别为0.26和0.08,这表明TiN可能是低辐射膜的良好候选者。

更新日期:2021-01-28
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