In this work, we have studied the electronic states with and without a donor impurity positioned on the first rectangular-shaped surface (θ = 0°) of the new variant quantum dot (VQD) of azimuthal angle θ, radius R, and height H. The VQD takes several forms depending on the value of the geometric angle θ, which it passes from zero to the limit of 360° to reach the cylindrical form. Within the framework of the effective mass approximation and the limit of the infinite potential, we have obtained the eigenvalues from the Schrödinger equation by using the finite difference method (FDM). The binding energy is calculated after fixing the donor impurity at the center and the eccentric positions of the surface. Indeed, the binding energy takes the clear maximums when the impurity moves vertically and horizontally over the surface. It is very sensitive to each value of the geometric angle, the position of the impurity, the radius, and the height. We think that this new work may reveal important practical interests and provide another way to adjust electronic transitions in optoelectronic devices.

在这项工作中，我们研究了带有和不带有供体杂质的电子态，这些电子态 位于方位角为θ，半径为R和高度为H的新变体量子点（VQD）的第一矩形表面（θ = 0°）。VQD根据几何角度θ的值采取几种形式，它从零到360°的范围达到圆柱形状。在有效质量近似和无限势极限的框架内，我们使用有限差分法（FDM）从Schrödinger方程获得了特征值。在将施主杂质固定在表面的中心和偏心位置之后，计算结合能。实际上，当杂质在表面上垂直和水平移动时，结合能达到明显的最大值。它对几何角度，杂质位置，半径和高度的每个值都非常敏感。我们认为，这项新工作可能会揭示重要的实际兴趣，并提供另一种方式来调整光电设备中的电子跃迁。