Contact electrification involving semiconductors has attracted attention for that it generates direct current. But its mechanism is still under debate, especially for the liquid-semiconductor cases. Here, the tribo-current is generated by sliding a DI water droplet on a semiconductor wafer, such as Si and TiO₂, under the light irradiation. It is revealed that the photoexcited electron-hole pairs at the interface will contribute to the tribo-current, and the enhanced tribo-current increases with the increased light intensity or the decreased light wavelength. The results suggest that the tribo-current at the DI water-semiconductor interfaces is induced by the tribovoltaic effect, in which electron-hole pairs are excited during contact owing to the energy released by the newly formed bonds, which can be named as “bindington”. The electron-hole pairs are further driven by the built-in electric field to move from one side to the other side at the interfaces, generating a direct current. The findings imply that the electron transfer exist at the liquid-solid interface in the CE, and support the “two-step” model for the formation of the electric-double layer, which was first proposed by Wang.

涉及半导体的接触式电气化因其产生直流电而备受关注。但是其机制仍在争论中，特别是对于液态半导体案件。在此，摩擦电流是通过将DI水滴在Si和TiO ₂等半导体晶片上滑动而产生的，在光照下。揭示了界面处的光激发电子-空穴对将有助于摩擦电流，并且增强的摩擦电流随着光强度的增加或光波长的减小而增加。结果表明，去离子水-半导体界面处的摩擦电流是由摩擦电压效应引起的，其中由于新形成的键释放的能量，在接触过程中电子-空穴对被激发，可以称为“结合子”。 ”。电子-空穴对进一步受到内置电场的驱动，以在界面处从一侧移动到另一侧，从而产生直流电。这些发现暗示，电子转移存在于CE的液固界面，并支持“双步”模型形成双电层，