This study evaluates how the electrical characteristics of potassium sodium niobate, K_0.5Na_0.5NbO₃ (KNN) thin film, are affected by yttrium doping. For the KNN thin films doped with yttrium, the secondary phase was not observed, which means that the films preserved the orthorhombic lattice. Yttrium doping affected the grain structure where microscopic doping concentration (0.5 mol%) was associated with higher homogeneity in the structure. In comparison, doping also led to the dielectric loss reducing to 0.02 at 0.5 mol% yttrium concentration. Additionally, the quality factor rose to 25.73, and the dielectric permittivity had an enhanced value of 508. KNN doped with 0.5 mol% yttrium was determined to be appropriate for applications concerning piezoelectric energy harvesting. Hence, the research highlights the enormous potential of yttrium-doped KNN as an alternative for the traditionally-used lead zirconate titanate (PZT) for harvesting piezoelectric energy. The results indicate that the thin film produced during the process was appropriate for use in high-frequency electronics.

这项研究评估了铌酸钠钾K _0.5 Na _0.5 NbO ₃的电特性（KNN）薄膜，受钇掺杂的影响。对于掺有钇的KNN薄膜，未观察到第二相，这意味着该膜保留了正交晶格。钇掺杂影响晶粒结构，其中微观掺杂浓度（0.5 mol％）与组织中较高的均匀性有关。相比之下，掺杂还导致钇浓度为0.5 mol％时的介电损耗降低到0.02。另外，品质因数提高到25.73，介电常数提高到508。掺有0.5 mol％钇的KNN被确定适用于压电能量收集领域。因此，这项研究强调了掺钇的KNN的巨大潜力，可以替代传统上用于收集压电能量的锆钛酸铅（PZT）。结果表明，在此过程中产生的薄膜适用于高频电子设备。