The field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.

自旋电子学领域由于其能够为当今电子电路中功耗增加同时缩小技术规模的问题提供解决方案的能力，最近引起了极大的关注。基于自旋电子的结构利用了电子的自旋自由度，使其具有零待机泄漏，低功耗，无限的耐力，良好的读写性能，非易失性以及与当前基于电子电路的3D集成能力，从而具有独特性CMOS技术。所有这些优点推动了积极的研究活动，以在存储单元中使用自旋电子器件，并为未来的内存处理架构概念进行了改进。本文将探讨自旋电子学发展领域的重要里程碑。它包括各种物理现象，例如巨大的磁阻效应，隧道磁阻效应，自旋传递扭矩，自旋霍尔效应，电压控制的磁各向异性效应以及电流引起的畴壁/天空运动。此外，还讨论了各种自旋电子器件，例如自旋阀，磁性隧道结，基于畴壁的赛道存储器，所有自旋逻辑器件，以及最近嗡嗡的天空飞弹和基于磁/硅的混合器件。还回顾了在这些自旋电子设备中写入信息的各种开关机制的详细说明。最后，概述了混合磁/硅基设备的概述，这些设备具有在不久的将来用于内存中处理（内存中逻辑）体系结构的能力。在这篇文章中，