High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient,Nanoscale

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High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient
Nanoscale ( IF 5.8 ) Pub Date : 2021-1-6 , DOI: 10.1039/d0nr07888c
Tariq Aziz _{1,

2,

3,

4,

5} , Shijing Wei _{1,

2,

3,

4,

5} , Yun Sun _{1,

2,

3,

4,

5} , Lai-Peng Ma _{1,

2,

3,

4,

5} , Songfeng Pei _{1,

2,

3,

4,

5} , Shichao Dong _{1,

2,

3,

4,

5} , Wencai Ren _{1,

2,

3,

4,

5} , Qi Liu _{5,

6,

7,

8} , Hui-Ming Cheng _{1,

2,

3,

4,

5} , Dong-Ming Sun _{1,

2,

3,

4,

5}

Affiliation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its redox reaction with an active metal electrode, so the obtained RRAMs are typically plagued by inferior performance and reliability. Here, we report a strategy to develop high-performance flexible RRAMs by using graphene oxidized with a perpendicular oxidation gradient as the resistive layer. In contrast to a homogeneous oxide, this graphene together with its distinctive inter-layer oxygen diffusion path enables excellent oxygen ion/vacancy diffusion. Without an interfacial redox reaction, oxygen ions can diffuse to form conductive filaments with two inert metal electrodes by applying a bias voltage. Compared with state-of-the-art graphene oxide RRAMs, these graphene RRAMs have shown superior performance including a high on–off current ratio of ∼10⁵, long-term retention of ∼10⁶ s, reproducibility over 10⁴ cycles and long-term flexibility at a bending strain of 0.6%, indicating that the material has great potential in wearable smart data-storage devices.

中文翻译：

基于垂直氧化梯度氧化石墨烯的高性能柔性电阻式随机存取存储设备

制造基于氧化石墨烯的电阻式随机存取存储器（RRAM）的常规策略仅限于具有均质氧化的电阻层，并且开关行为取决于其与活性金属电极的氧化还原反应，因此获得的RRAM通常受劣质性能困扰性能和可靠性。在这里，我们报告了通过使用以垂直氧化梯度氧化的石墨烯作为电阻层来开发高性能柔性RRAM的策略。与均相氧化物相反，该石墨烯及其独特的层间氧扩散路径可实现出色的氧离子/空位扩散。在没有界面氧化还原反应的情况下，氧离子可以通过施加偏置电压扩散而形成带有两个惰性金属电极的导电丝。^{如图5所示}，其长期保留时间约为10⁶ s，在10⁴个循环中具有可重复性，并且在0.6％的弯曲应变下具有长期柔韧性，表明该材料在可穿戴智能数据存储设备中具有巨大潜力。

更新日期：2021-01-19

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