Two-dimensional (2D) heterostructures have been widely studied in recent years and are envisioned to play a key role in future integrated electronics and optoelectronics. The thus-involved van der Waals integration technique provides a feasible way to integrate different 2D materials even with diverse crystal structures into heterostructures, providing a promising platform to explore new artificial materials with new properties. Here, for the first time, we have successfully realized the combination of orthogonal selenide (SnSe) with hexagonal MoS₂ into p–n heterojunctions though a two-step chemical vapor deposition method. High resolution transmission electron microscopy characterization shows that multilayer SnSe nanosheet is vertically stacked on MoS₂ nanosheet with high crystallinity. The precise spatial modulation of SnSe/MoS₂ heterostructures is verified by Raman diagrams. At the same time, the electrical and optoelectronic properties are probed though designing SnSe/MoS₂ p–n junction devices. Typical current rectification behaviors are obviously observed in dark condition. While under light illumination, obvious photovoltaic behavior is observed. Maximum short-circuit current (I _sc) and photon-electron conversion efficiency (η) are measured to be 67 nA and 1.8%, respectively. The results also indicate that the heterostructure can be employed for reliable ultra-sensitive photodetection, where maximum photoresponsivity is measured to be 384 A W⁻¹. The direct vapor growth of 2D p–n junctions with different lattice symmetries may expand the platform for the realization of new 2D electronic and optoelectronic devices.

近年来，二维（2D）异质结构得到了广泛的研究，并且预想在未来的集成电子学和光电子学中将发挥关键作用。这样参与的范德华（Van der Waals）集成技术为将具有不同晶体结构的不同2D材料集成到异质结构中提供了一种可行的方法，为探索具有新特性的新型人造材料提供了一个有希望的平台。在这里，我们首次通过两步化学气相沉积法成功实现了正交硒化物（SnSe）与六角形MoS ₂到p–n异质结的结合。高分辨率透射电子显微镜表征显示多层SnSe纳米片垂直堆叠在MoS _2上具有高结晶度的纳米片。通过拉曼图验证了SnSe / MoS ₂异质结构的精确空间调制。同时，通过设计SnSe / MoS ₂ p–n结器件来探究电学和光电学特性。在黑暗条件下，显然可以观察到典型的电流整流行为。在光照下，观察到明显的光伏行为。测得的最大短路电流（I _sc）和光电子转换效率（η）分别为67 nA和1.8％。结果还表明，该异质结构可用于可靠的超灵敏光电检测，其中最大光响应度为384 AW ^-1。具有不同晶格对称性的2D p–n结的直接气相生长可能会扩展实现新的2D电子和光电设备的平台。