An ensemble of thorium-229 ions embedded by pulsed laser implantation into a matrix of a broadband dielectric-silicon oxide is studied. The results of the experimental investigation of thorium ions’ lifetime as charged components of the Th⁺/SiO₂/Si system formed immediately after laser implantation are presented. The modelled theoretical description takes into account the instantaneous charging of the surface via laser implantation followed by charge relaxation due to the effect of autoelectronic emission that leads to time dependent partial neutralization of the surface charge by tunneling electrons. It was found that the lifetime of Th⁺ ions on the SiO₂ surface can exceed 10 s, which would be an attractive opportunity for studying the nuclear low-lying isomeric transition in the thorium-229 isotope.

研究了通过脉冲激光注入将embedded 229离子嵌入宽带介电氧化硅基体中的整体。提出了investigation离子寿命的实验研究结果，or离子的寿命是激光注入后立即形成的Th ⁺ / SiO ₂ / Si系统带电组分。建模的理论描述考虑了通过激光注入对表面的瞬时电荷，然后由于自动电子发射的作用而使电荷弛豫，这导致了隧穿电子导致表面电荷随时间的部分中和。发现SiO ₂上Th ⁺离子的寿命 表面可能会超过10 s，这对于研究229 229同位素中的低核同位素异构过渡将是一个有吸引力的机会。