We investigated the effect of the conducting substrate on the performance of GaAs-based VCSELs, where the substrates were 230 μm-GaAs (reference), 10 μm-GaAs/metal, and 0.5 μm-GaAs/metal. The VCSELs with the 10 μm- and 0.5 μm thick GaAs/metal-substrates produced higher light output power than the reference. For example, the thin GaAs/metal substrate samples showed 16.3%–16.7% higher light output power at 3.0 A than the reference. It was shown that the thin GaAs samples produced 12.2%–14.0% higher power conversion efficiency at 3.0 A than the reference. At a high current region, the metal-substrate samples yielded lower junction temperature than the reference, namely, the thin GaAs samples gave 42 C–47.4 C lower junction temperature at 2.0 A than the reference. Further, the thin GaAs samples revealed better light output degradation characteristics than the reference. For instance, the light output of the reference was degraded by 30.2% at 85 C, whereas the thin GaAs samples were degraded by 20.1%–20.5%. Near-field images and emission profiles demonstrated that the metal-substrate samples suffered from no damage incurred during the VCSEL fabrication process.

我们研究GaAs系的VCSEL的性能，其中该基材为导电衬底的作用230 μ M-砷化镓（参考），10 μ M-的GaAs /金属和0.5 μ M-的GaAs /金属。与10的VCSEL μ m-和0.5 μ厚度为m的GaAs /金属基板产生的光输出功率高于参考值。例如，薄的砷化镓/金属衬底样品在3.0 A时的光输出功率比参考样品高16.3％至16.7％。结果表明，薄的砷化镓样品在3.0 A时的功率转换效率比参考样品高出12.2％–14.0％。在高电流区域，金属衬底样品的结温低于参考电压，即，薄GaAs样品在2.0 A时的结温比参考温度低42 C–47.4C。此外，薄砷化镓样品比参考样品显示出更好的光输出衰减特性。例如，参考光输出在85 C时降低了30.2％，而薄GaAs样品则降低了20.1％至20.5％。