In this article, we present a study of single-event transients (SETs) through an integrated test vehicle. This block was designed and manufactured within two test-chips in 28- and 22-nm fully depleted silicon-on-insulator (FDSOI) advanced technologies. Radiation testing was performed on those test chips in order to characterize SETs. The results are cross-coupled with Monte Carlo simulations and discussed.

中文翻译：

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28nm UTBB SOI 技术及以下技术中的单事件瞬态空间特性

在本文中，我们通过集成测试工具介绍了对单事件瞬态 (SET) 的研究。该模块是在采用 28 纳米和 22 纳米全耗尽绝缘体上硅 (FDSOI) 先进技术的两个测试芯片中设计和制造的。对这些测试芯片进行辐射测试以表征 SET。结果与蒙特卡罗模拟交叉耦合并进行了讨论。