Space radiation damage and proton-induced transient effects were evaluated on 4.4- $\mu \text{m}$ cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60-MeV protons on three types of APD samples: $4 \times 4$ pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC) and a $2 \times 8$ pixel photon-counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The $2 \times 8$ pixel photon-counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room-temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output, but recover within $1~\mu \text{s}$ .

中文翻译：

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质子辐射对 HgCdTe 雪崩光电二极管探测器的影响

空间辐射损伤和质子引起的瞬态效应在 4.4- $\mu \text{m}$ 由 Leonardo DRS 开发的截止 HgCdTe 雪崩光电二极管 (APD) 阵列。在三种类型的 APD 样品上使用 ~60-MeV 质子测量了作为总剂量高达 100 krad (Si) 的函数的器件性能： $4 \times 4$ 像素 APD 扇出阵列，连接或不连接到读出集成电路 (ROIC) 和一个 $2 \times 8$ 像素光子计数 APD 焦平面阵列 (FPA)。还进行了伽马射线测试以研究电离效应。两种 APD 阵列都表现出量子效率的小幅下降和暗电流随质子注量的线性增加。这 $2 \times 8$ 像素光子计数 FPA 也表现出暗计数率随质子剂量增加。在质子照射和过夜室温预热后，两种类型的 APD 阵列中 80 K 的 APD 暗电流显着增加。这些 HgCdTe APD 阵列的所有辐射损伤在 >85°C 下烘烤数小时后均已退火。发现通过设备的瞬态质子在检测器输出端产生大脉冲，但在 $1~\mu \text{s}$ .