The impact of thermal quenching on the photostability of bismuth active center (BAC) is investigated through measuring the photo-bleaching process under 830 nm irradiation in quenched Bi/Er co-doped fiber (BEDF). By fitting with the stretched-exponential model, the emission intensity ascribed to the photostable BAC associated with silica (BAC-Si) at 1400 nm (I(∞)), unbleachable ratio (γUB) and bleaching time (τB) are obtained. Compared to the untreated sample, the I(∞) increases with higher temperature or a longer dwell time, while both the γUB and τB decrease. The results show that BAC-Si could be bleached faster, while additional amount of BAC-Si could be retained in thermally quenched samples. Besides, the lower photostability of the newly quenching activated BAC, impacted by different quenching conditions, is estimated.

中文翻译：

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热淬火对 Bi/Er 共掺杂光纤 Bi 活性中心光稳定性的影响


通过测量淬火Bi/Er共掺光纤(BEDF)中830 nm照射下的光漂白过程，研究了热淬火对铋活性中心(BAC)光稳定性的影响。通过拟合拉伸指数模型，得到了与二氧化硅相关的光稳定BAC（BAC-Si）在1400 nm处的发射强度（I（∞））、不漂白率（γUB）和漂白时间（τB）。与未处理的样品相比，I(∞)随着温度升高或停留时间延长而增加，而γUB和τB均降低。结果表明，BAC-Si 可以更快地漂白，同时热淬火样品中可以保留额外量的 BAC-Si。此外，估计受不同猝灭条件的影响，新猝灭激活的 BAC 的光稳定性较低。