We report the Geiger mode operation of back-illuminated AlGaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back-illumination to leverage hole-initiated multiplication. The spectral response was analyzed with a peak detection wavelength of 255 nm with an external quantum efficiency of ~14% at zero bias. Low-photon detection capabilities were demonstrated in devices with areas $25~\mu \text{m} \times 25~\mu \text{m}$ . Single photon detection efficiencies of ~5% were achieved.

中文翻译：

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AlGaN 雪崩光电二极管在 255 nm 处的盖革模式操作

我们报告了背照式 AlGaN 雪崩光电二极管的盖革模式操作。这些器件是在透明的 AlN 模板上制造的，专门用于背照以利用空穴引发的倍增。使用 255 nm 的峰值检测波长分析光谱响应，在零偏压下的外部量子效率约为 14%。在具有区域的设备中展示了低光子检测能力 $25~\mu \text{m} \times 25~\mu \text{m}$ . 实现了~5% 的单光子检测效率。