This article presents an improved nonlinear empirical I/V model suitable for GaAs and GaN FETs. The new drain‐to‐source current formulation accurately represents the symmetric and the asymmetric bell‐shaped transconductance (g_m) for all V_DS values. Besides modeling with high accuracy the I/V characteristic, the proposed model can fit the first and second derivatives of the transconductance, from the ohmic to the saturation region, including the pinch‐off region. The high correlation between experimental and simulated data of the I/V curves of GaAs and GaN FETs, ACPR, load‐pull, and a class‐J power amplifier designed in S‐band corroborates the usefulness of the proposed model, considering only the static I/V model as the main nonlinear element of the electrical equivalent circuit model of the transistor.

中文翻译：

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适用于设计功率放大器的GaAs和GaN FET的非线性经验I / V模型

本文提出了一种适用于GaAs和GaN FET的改进的非线性经验I / V模型。新的漏源电流公式可精确表示所有V _DS的对称和不对称钟形跨导（g _m）价值观。除了可以对I / V特性进行高精度建模外，所提出的模型还可以拟合跨导的一阶和二阶导数，从欧姆到饱和区（包括夹断区）。GaAs和GaN FET的I / V曲线，ACPR，负载拉和在S波段设计的J类功率放大器的实验数据和仿真数据之间的高度相关性证实了所建议模型的有效性，仅考虑了静态I / V模型是晶体管等效电路模型的主要非线性元素。