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Occurrence of nonohmic trend in the ballistic transport mode of a modelled low dimensional device capable of performing electronic functions
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2021-01-18 , DOI: 10.1016/j.spmi.2021.106808
M. Taazeem Ansari , A. Almohammedi , M. Rafat , M. Mudassir Husain

Electronic transport mechanism has been investigated through a modelled one-dimensional carbon chain consisting of four atoms, connected to two identical planar zigzag graphene nanoribbons (ZGNR) electrodes. Non equilibrium green's function (NGEF) formalism, coupled with density functional theory (DFT) is employed in stabilizing the geometry of the constructed device and in calculating the electronic transmission (conduction) at room temperature. The primitive pristine carbon chain device shows three distinct behaviours in the context of negative differential resistance (NDR) within a small voltage range 0.0–2.0 V. The first nonlinear trend shows a sharp NDR feature. It appears within an extremely low operating voltage range 0.0–0.5 V. Doping with nitrogen and boron atoms in different parts of the device (scattering and electrode region) tends to alter the transport behaviour differently. It is exciting to observe the functioning of the device upon doping in two different ways. Doping in scattering region of the device keeps the shape of I–V curve same in forward and reverse bias operation. However, doping in the electrode region results in altering the shape of I–V curve on biasing differently. Eventually in former case doping in scattering region enhances (amplify) the magnitude of current and in later, doping in electrode region makes it suitable for rectification. Analysis of the computational data generated by the, extremely small device gives exceptionally high values of PVR (peak to value ratio) and rectification ratio. Devices demonstrating high values of these two parameters are of outmost importance and often desired, as they are suitable in performing useful electronic functions. The advantage of the present device over enormous number of similar devices reported in past, being small consisting of only four atoms long carbon chain and short electrodes, its performance potential is comparatively high. The proposed carbon chain device reported here can be utilized as a nano transistor in miniaturized electronic circuitry. Uniqueness of the reported device is its small size coupled with multiple NDR, owing to smallness of dimensions the packing density of such transistors on a single chip operational capability can be increased manifold thereby enhancing its functional performance.



中文翻译:

能够执行电子功能的建模低维设备的弹道运输模式中出现非欧姆趋势

已通过模拟的由四个原子组成的一维碳链研究了电子传输机制,该碳原子连接到两个相同的平面之字形石墨烯纳米带(ZGNR)电极。非平衡格林函数(NGEF)形式主义,再加上密度泛函理论(DFT),用于稳定所构造设备的几何形状,并用于计算室温下的电子传输(传导)。原始的原始碳链装置在0.0-2.0 V的小电压范围内在负微分电阻(NDR)的情况下显示出三种不同的行为。第一个非线性趋势显示出明显的NDR特征。它出现在0.0-0.5 V的极低工作电压范围内。在器件的不同部分(散射区和电极区)掺杂氮和硼原子往往会不同地改变传输行为。令人兴奋的是,以两种不同方式掺杂后观察到器件的功能。在正向和反向偏置操作中,器件散射区中的掺杂使IV曲线的形状保持不变。但是,在电极区域进行掺杂会导致在偏置不同时改变IV曲线的形状。最终,在前一种情况下,在散射区中进行掺杂会增强(放大)电流的大小,而在后一种情况下,在电极区中进行掺杂会使其适合于整流。通过对超小型设备生成的计算数据进行分析,可以得出非常高的PVR(峰均值比)和整流比值。展示这两个参数的高值的设备至关重要,因为它们适合执行有用的电子功能。与过去报道的大量类似装置相比,本装置的优点是体积小,仅由四个碳原子长的碳链和短电极组成,因此其性能潜力相对较高。本文报道的拟议碳链装置可以用作微型电子电路中的纳米晶体管。所报道的器件的独特之处在于它的体积小巧,并具有多个NDR,由于尺寸小,这种晶体管在单芯片上的封装密度可以提高多种操作能力,从而增强其功能性能。因为它们适合执行有用的电子功能。与过去报道的大量类似装置相比,本装置的优点是体积小,仅由四个碳原子长的碳链和短电极组成,因此其性能潜力相对较高。本文报道的拟议碳链装置可以用作微型电子电路中的纳米晶体管。所报道的器件的独特之处在于其体积小巧且具有多个NDR,由于尺寸小巧,此类晶体管在单个芯片上的封装密度可以提高多种操作能力,从而增强其功能性能。因为它们适合执行有用的电子功能。与过去报道的大量类似装置相比,本装置的优点是体积小,仅由四个碳原子长的碳链和短电极组成,其性能潜力相对较高。本文报道的拟议碳链装置可以用作微型电子电路中的纳米晶体管。所报道的器件的独特之处在于其体积小巧且具有多个NDR,由于尺寸小巧,此类晶体管在单个芯片上的封装密度可以提高多种操作能力,从而增强其功能性能。由于它只有四个碳原子长的碳原子和短的电极,所以它的性能潜力相对较高。本文报道的拟议碳链装置可以用作微型电子电路中的纳米晶体管。所报道的器件的独特之处在于其体积小巧且具有多个NDR,由于尺寸小巧,此类晶体管在单个芯片上的封装密度可以提高多种操作能力,从而增强其功能性能。由于它只有四个碳原子长的碳原子和短的电极,所以它的性能潜力相对较高。本文报道的拟议碳链装置可以用作微型电子电路中的纳米晶体管。所报道的器件的独特之处在于其体积小巧且具有多个NDR,由于尺寸小巧,此类晶体管在单个芯片上的封装密度可以提高多种操作能力,从而增强其功能性能。

更新日期:2021-01-31
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