Eu doped Ga₂O₃ film has been grown on n-Si (111) substrate by pulsed laser deposition. Excellent structural and optical properties of the obtained Ga₂O₃:Eu film have been confirmed by X-ray diffraction, Raman and photoluminescence measurements. Subsequently, Ga₂O₃:Eu/n-Si based light-emitting diode was successfully fabricated with a multilayer structure of ITO/Ga₂O₃:Eu/n-Si/Au. Intense red electroluminescence peaking at 615 nm has been observed at room temperature by naked eyes from the fabricated device when a positive bias voltage is applied on the n-Si substrate. The current-voltage characteristics and electroluminescence spectra indicate that the Ga₂O₃:Eu/n-Si based light-emitting diode has a rather low driven voltage of ~7.9 V. The origin of the Eu-related electroluminescence has been clarified to originate from the defect-assisted energy transfer from Ga₂O₃ host to Eu³⁺ ions. We believe that this study will offer the possibility to develop the silicon-compatible full-color displays or lighting technology using Ga₂O₃ as host material.

通过脉冲激光沉积在n -Si（111）衬底上生长了Eu掺杂的Ga ₂ O ₃薄膜。通过X射线衍射，拉曼和光致发光测量已经证实了所获得的Ga ₂ O ₃：Eu膜的优异的结构和光学性质。随后，成功地制造了具有ITO / Ga ₂ O ₃：Eu / n -Si / Au的多层结构的Ga ₂ O ₃：Eu / n -Si基发光二极管。当在正温度下施加正偏电压时，用裸眼从所制造的器件中观察到在615 nm处出现强烈的红色电致发光峰。n -Si衬底。电流-电压特性和电致发光光谱表明，基于Ga ₂ O ₃：Eu / n -Si的发光二极管的驱动电压较低，约为7.9V。Eu相关电致发光的起源已被阐明是起源从Ga ₂ O ₃主体到Eu ³⁺离子的缺陷辅助能量转移。我们相信，这项研究将为使用Ga ₂ O ₃作为主体材料开发与硅兼容的全彩显示器或照明技术提供可能性。