Single-crystal boron phosphide (BP), a high-temperature semiconductor, is prepared by a eutectic melting method. Large BP single crystals (>1 mm) are synthesized at high pressure and high temperature (5.0 GPa and 3000 °C). Their growth mechanism is analyzed. Ultraviolet–visible spectroscopy and thermogravimetry/differential thermal analysis show that BP is an indirect semiconductor (2.01 eV) and has excellent thermal stability (>1200 °C). Success in the synthesis of good BP crystals offers a huge opportunity to determine their intrinsic properties and will also stimulate more research on their performance as semiconductors.

中文翻译：

---

在5.0 GPa和3000°C下通过共晶熔体生长毫米级单晶磷化硼

单晶磷化硼（BP）是一种高温半导体，是通过共晶熔融法制备的。在高压和高温（5.0 GPa和3000°C）下合成了大型BP单晶（> 1 mm）。分析了它们的生长机理。紫外可见光谱和热重分析/差示热分析表明，BP是一种间接半导体（2.01 eV），具有出色的热稳定性（> 1200°C）。合成成功的BP晶体的成功为确定其固有性质提供了巨大的机会，也将激发人们对其作为半导体性能的更多研究。