Cesium-lead-bromide perovskites with balanced stoichiometry enabled by sodium-bromide doping for all-vacuum deposited silicon-based light-emitting diodes,Journal of Materials Chemistry C

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Cesium-lead-bromide perovskites with balanced stoichiometry enabled by sodium-bromide doping for all-vacuum deposited silicon-based light-emitting diodes
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-12-22 , DOI: 10.1039/d0tc04643d
Fengyou Qin _{1,

2,

3,

4} , Hongjun Tian _{1,

2,

3,

4} , Minxing Yan _{1,

2,

3,

4} , Yanjun Fang _{1,

2,

3,

4} , Deren Yang _{1,

2,

3,

4}

Affiliation

Perovskite light-emitting diodes (PeLEDs) have drawn tremendous research attention recently. However, they are mainly prepared via solution processes, while the devices fabricated using the all-vacuum deposition procedure still remain largely unexplored. In this work, we prepared a cesium-lead-bromide perovskite film using the vacuum deposition method, and realized a more balanced stoichiometry by replacing some CsBr with NaBr. It was discovered that the introduction of an appropriate amount of NaBr not only reduced the insulating Cs₄PbBr₆ phase in the active layer, but also passivated the trap states effectively, which resulted in a 2-fold increase of the peak external quantum efficiency (EQE) of the PeLEDs to 2% with the maximum luminance reaching close to 40 000 cd m⁻² and significantly improved device operational stability compared to the undoped counterparts. Furthermore, we fabricated the first top-emissive silicon-based PeLED using the all-vacuum deposition method based on the NaBr doped perovskite films, and achieved a peak EQE of 0.33%, which has provided a promising alternative way for the design and preparation of high-performance silicon-based display devices in the future.

中文翻译：

溴化钠掺杂可实现化学计量平衡的溴化铯铯钙钛矿，适用于全真空沉积的硅基发光二极管

钙钛矿发光二极管（PeLED）最近引起了极大的研究关注。但是，它们主要是通过溶液法制备的，而使用全真空沉积法制备的器件仍未开发。在这项工作中，我们使用真空沉积法制备了溴化铯铯铅钙钛矿薄膜，并通过用NaBr代替某些CsBr实现了更平衡的化学计量。发现引入适量的NaBr不仅会降低绝缘Cs ₄ PbBr ₆有源层中的相态，但也有效地钝化了陷阱态，这使PeLED的峰值外部量子效率（EQE）增长了2倍，达到2％，最大亮度接近40,000 cd m ^-2与未掺杂的同类产品相比，显着提高了设备的运行稳定性。此外，我们使用基于NaBr掺杂的钙钛矿薄膜的全真空沉积方法制造了首个基于顶部发射的硅基PeLED，并实现了0.33％的峰值EQE，这为设计和制备H2O提供了有希望的替代方法。高性能的基于硅的显示设备。

更新日期：2021-01-18

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