In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ($R_a$) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

在目前的工作中，结合了工业上两种优选方法，即化学机械抛光（CMP）和磁流变抛光（MRF）的新颖混合抛光工艺已用于抛光单晶硅晶片。实验是在本地开发的双盘化学辅助磁流变整理（DDCAMRF）实验装置上进行的。中央复合设计（CCD）用于计划实验，以估算各种工艺因素的影响，即抛光速度，浆料流速，CIP百分比浓度和工作间隙对表面粗糙度的影响（${\mathrm{[R}}_{\mathrm{一种}}$）通过DDCAMRF处理。进行方差分析以确定和分析影响抛光硅晶片表面粗糙度的重要因素的贡献。统计调查表明，CIP浓度百分比对工艺性能的影响最大，其次为工作间隙（21.4％），浆料流速（14.4％）和抛光速度（1.65％），对工艺性能的影响最大。通过3D光学轮廓仪测量抛光的硅晶片的表面粗糙度。进行扫描电子显微镜（SEM）和原子力显微镜（AFM）以了解抛光硅片的表面形态。发现硅晶片的表面粗糙度随着抛光速度和浆料流速的增加而提高，