Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al₂O₃) coating has been replaced with yttria (Y₂O₃) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.

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暴露于CF4 / O2等离子体的腔室涂层材料的表面分析

在减少等离子体处理设备的内表面涂层对于降低维护成本，工艺漂移和污染物方面已变得至关重要。常规优选的氧化铝（Al ₂ O ₃）涂层已被氧化钇（Y ₂ O ₃）由于氟基蚀刻具有长期的耐用性；但是，射频（RF）功率的不断提高，必须使用替代涂层材料来减少一系列高功率半导体制造环境中的工艺偏移。在这项研究中，我们研究了常压喷涂氧化铝，氧化钇，钇铝石榴石（YAG）和氟氧化钇（YOF）的氟基耐蚀性。将制备的陶瓷涂覆样品直接暴露于氧化硅蚀刻，并且通过扫描电子显微镜，能量色散X射线光谱法和X射线光电子能谱表征暴露于等离子体的样品的表面。我们发现理想的涂料必须通过自由基中的氟原子表现出较高的等离子体诱导的结构变形。为了耐受氟基等离子体暴露，显示出与氟化物的结合结构比氧化物基陶瓷更有效。因此，氟化物基陶瓷材料可以成为腔室涂层材料的有前途的候选材料。