Yttrium oxide (Y₂O₃) powder was used as an interface layer between metal (Al) and semiconductor (p-Si). Y₂O₃ powder was coated with a spin-coating method on the p-Si and the Al/Y₂O₃/p-Si Schottky Barrier Diodes (SBD) was fabricated. The electrical characteristics of the fabricated SBD were analyzed at various temperatures and compared with each other. While Φ_B0 decrease from 0.931 eV to 0.211 eV, n increased from 1.63 to 10.07 with decreasing temperature ranging from 340 K to 60 K. The Richardson constant (A^⁎) value obtained experimentally for the Al/Y₂O₃/p-Si SBD was founded as very close to the theoretical A^⁎ value of p-Si. Photoconductivity mechanism (PM) of the Al/Y₂O₃/p-Si SBD was examined by using the photocurrent and the illuminating intensity at −1 V and it was seen that it had a nonlinear behavior. Additionally, the structural and morphologic properties of pure-Y₂O₃ were analyzed by using X-Rays Diffraction (XRD), Scanning Electron Microscopy (SEM), and Raman spectroscopy (Raman). The fabricated Al/Y₂O₃/p-Si SBD can be used as a photodiode application in various electronic and optoelectronic technologies.

氧化钇（Y ₂ O ₃）粉末用作金属（Al）和半导体（p-Si）之间的界面层。将Y ₂ O ₃粉末通过旋涂法涂覆在p-Si上，并且制造Al / Y ₂ O ₃ / p-Si肖特基势垒二极管（SBD）。在各种温度下分析了制成的SBD的电特性，并进行了比较。而Φ _B0减少从0.931 EV至0.211伏特，正从1.63增加至10.07随着温度范围从340 K至60 K的理查森常数（A ^⁎用于铝/实验获得的）值Y ₂ ö ₃/ p-Si SBD的建立非常接近于p-Si的理论^A⁎值。通过使用光电流和-1 V下的照明强度检查了Al / Y ₂ O ₃ / p-Si SBD的光电导机理（PM），发现它具有非线性行为。此外，通过使用X射线衍射（XRD），扫描电子显微镜（SEM）和拉曼光谱（Raman）分析了纯Y ₂ O ₃的结构和形态特性。制成的Al / Y ₂ O ₃ / p-Si SBD可用作各种电子和光电技术中的光电二极管应用。