Ta-doped SnO₂ (TTO) films were deposited at 3 × 10⁻³ Torr pressure from the 6 wt. % Ta₂O₅-doped SnO₂ target at temperatures of 30–500 °C in Ar sputtering gas. The Ta dopants in the SnO₂ host lattice were detected via X-ray photoemission, EDX mapping, and photoluminescence spectra. The Ta⁵⁺–Sn⁴⁺ substitution formed the ${\mathrm{O}}_{\mathrm{O}}^{\mathrm{x}}$ at ${\mathrm{V}}_{\mathrm{O}}^{\mathrm{x}}$sites in the host lattice and the substitution occurred at deposition temperatures greater than 200 °C. The substitution leads to a decrease in the amount of ${\mathrm{V}}_{\mathrm{O}}^{\mathrm{x}}$ in the SnO₂ lattice corresponding to the preferred rutile SnO₂ (110) lattice reflection in the X-ray diffraction patterns. The ultraviolet-visible transmittance in visible light was approximately 80%. The lowest resistivity achieved was 2.0 × 10⁻³ Ω.cm, with a carrier concentration of 1.28 × 10²⁰ cm⁻³ and carrier mobility of 24.5 cm²V⁻¹s⁻¹. The integration of the TTO-400 film with (n- and p-) Si exhibited an excellent photoelectric effect.

从6 wt。％的重量开始在3×10 ^-3托压力下沉积Ta掺杂的SnO ₂（TTO）薄膜。在30-500°C的Ar溅射气体中，掺有％Ta ₂ O _5的SnO ₂靶。通过X射线光发射，EDX映射和光致发光光谱检测SnO ₂主晶格中的Ta掺杂剂。Ta ⁵⁺ -Sn ⁴⁺取代形成${\mathrm{Ø}}_{\mathrm{Ø}}^{\mathrm{X}}$ 在 ${\mathrm{V}}_{\mathrm{Ø}}^{\mathrm{X}}$位在主晶格中，取代发生在沉积温度高于200°C时。取代导致减少的数量${\mathrm{V}}_{\mathrm{Ø}}^{\mathrm{X}}$在SnO ₂晶格中对应于优选的金红石SnO ₂（110）在X射线衍射图中的晶格反射。可见光中的紫外线-可见光透射率约为80％。达到的最低电阻率为2.0×10 ^-3 Ω.cm，具有1.28×10的载流子浓度²⁰厘米^-3和载流子迁移的24.5厘米² V ^-1小号^-1。TTO-400薄膜与（n-和p-）Si的集成表现出出色的光电效应。