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Optical, electrical, and structural properties of Ta-doped SnO2 films against substrate temperature using direct current magnetron sputtering
Surfaces and Interfaces ( IF 5.7 ) Pub Date : 2021-01-16 , DOI: 10.1016/j.surfin.2021.100943
Ha Thanh Tung , Thanh Phuong Nguyen , Phuc Dang Huu , Tran Le

Ta-doped SnO2 (TTO) films were deposited at 3 × 10−3 Torr pressure from the 6 wt. % Ta2O5-doped SnO2 target at temperatures of 30–500 °C in Ar sputtering gas. The Ta dopants in the SnO2 host lattice were detected via X-ray photoemission, EDX mapping, and photoluminescence spectra. The Ta5+–Sn4+ substitution formed the OOx at VOxsites in the host lattice and the substitution occurred at deposition temperatures greater than 200 °C. The substitution leads to a decrease in the amount of VOx in the SnO2 lattice corresponding to the preferred rutile SnO2 (110) lattice reflection in the X-ray diffraction patterns. The ultraviolet-visible transmittance in visible light was approximately 80%. The lowest resistivity achieved was 2.0 × 10−3 Ω.cm, with a carrier concentration of 1.28 × 1020 cm−3 and carrier mobility of 24.5 cm2V−1s−1. The integration of the TTO-400 film with (n- and p-) Si exhibited an excellent photoelectric effect.



中文翻译:

直流磁控溅射Ta掺杂SnO 2薄膜对衬底温度的光学,电学和结构性能

从6 wt。%的重量开始在3×10 -3托压力下沉积Ta掺杂的SnO 2(TTO)薄膜。在30-500°C的Ar溅射气体中,掺有%Ta 2 O 5的SnO 2靶。通过X射线光发射,EDX映射和光致发光光谱检测SnO 2主晶格中的Ta掺杂剂。Ta 5+ -Sn 4+取代形成ØØXVØX位在主晶格中,取代发生在沉积温度高于200°C时。取代导致减少的数量VØX在SnO 2晶格中对应于优选的金红石SnO 2(110)在X射线衍射图中的晶格反射。可见光中的紫外线-可见光透射率约为80%。达到的最低电阻率为2.0×10 -3 Ω.cm,具有1.28×10的载流子浓度20厘米-3和载流子迁移的24.5厘米2 V -1小号-1。TTO-400薄膜与(n-和p-)Si的集成表现出出色的光电效应。

更新日期:2021-01-24
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