In this study, different film constructions (ZnS, ZnS/Au, and ZnS/Au/ZnS) were evaporated by thermal-evaporation. The study was conducted in order to identify the best film for solar cell applications. The study identifies ZnS (399.6 nm)/Au (18 nm) as the most appropriate film for further investigation because it shows a maximum optical band gap ≈ 3.43 eV and the minimum resistivity (0.46 × 10⁻³ Ω cm). It is noticed that the interference fringes disappeared due to the addition of the Au layer. The absorption edge was shifted towards a lower energy as the Au increased. The band gap E_g and resistivity ρ_Rt were 3.49 eV and 0.12 × 10⁻³ Ωcm respectively. The refractive index increased up to the maximum value 6.2. The ZnS (399.6 nm)/Au (6 nm)/ZnS (399.6 nm) films exhibited amorphous structure, and with the increase of the Au thickness layer, the diffraction peaks related to FCC phase of the Au appeared. The film ZnS (399.6)/Au 18/ZnS (399.6) shows very promising parameters. The bandgap Eg is 3.38 eV, the sheet resistance is 1.53 × 10⁻³ Ω, the figure of merit equals 3.7 × 10⁻³ Ω⁻¹ and the refractive index is 6.20. The results prove that the film ZnS (399.6)/Au 18/ZnS (399) is suitable for conductive electrodes in solar cells.

在这项研究中，通过热蒸发蒸发了不同的膜结构（ZnS，ZnS / Au和ZnS / Au / ZnS）。进行这项研究是为了确定适用于太阳能电池的最佳薄膜。这项研究确定ZnS（399.6 nm）/ Au（18 nm）是最适合进一步研究的膜，因为它显示出最大的光学带隙≈3.43 eV和最小的电阻率（0.46×10 ^-3Ωcm  ）。注意到由于添加了Au层，干涉条纹消失了。随着Au的增加，吸收边移向较低的能量。带隙E _g和电阻率_ρRt为3.49 eV和0.12×10 ^-3Ωcm。折射率增加到最大值6.2。ZnS（399.6 nm）/ Au（6 nm）/ ZnS（399.6 nm）膜呈现非晶结构，并且随着Au厚度层的增加，出现了与Au的FCC相有关的衍射峰。薄膜ZnS（399.6）/ Au 18 / ZnS（399.6）显示出非常有前途的参数。的带隙EG是3.38 eV的，薄层电阻为1.53×10 ^-3  Ω，优值系数等于3.7×10 ^-3  Ω ^-1和折射率为6.20。结果证明，膜ZnS（399.6）/ Au 18 / ZnS（399）适用于太阳能电池中的导电电极。