The effect of hydrostatic pressure up to 12 kbar on electrical resistance in the basal ab-plane of optimally oxygen-doped Y_1–xPr_xBa₂Cu₃O_7–δ single crystals doped with praseodymium (х≈0.23) has been investigated. It was determined that the introduction of praseodymium leads to a fivefold increase in the baric derivative dT_c/dP at zero pressure; however, as the pressure rises, dT_c/dP decreases to a level characteristic of undoped Y_1–xPr_xBa₂Cu₃O_7–δ samples with an optimal oxygen content.

中文翻译：

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高压对Y _1-x Pr _x Ba ₂ Cu ₃ O7 _-δ单晶电阻率温度依赖性的影响

静水压力高达至12千巴的电阻在最佳氧掺杂Y上的基底ab平面的效果_{1- X}镨_X的Ba ₂的Cu ₃ ö _7-δ掺杂有镨（单晶х ≈0.23）已被调查。可以确定，在零压力下，ody的引入导致重衍生物dT _c / dP的增加了五倍。但是，随着压力的升高，dT _c / dP降低到未掺杂Y _{1– x} Pr _x Ba ₂ Cu的水平特征具有最佳氧气含量的₃ O _7–δ样品。