The carbon-based perovskite solar cells (C-PSCs) have attracted tremendous attentions due to the low fabrication cost and simple structure by omitting the hole transporting layer (HTL). However, the performance of C-PCSs is still lag behind those of conventional PSCs with HTL. In this work, an innovative C-PSC with a gradient doping absorber is proposed and explored by SCAPS simulation. The effect of different doping gradient, average doping content of gradient doping absorber and interface defect density are analyzed. Through the optimization of the above-mentioned parameters, an efficiency higher than 25% could be realized by using gradient doping of perovskite absorber in C-PSC, which is much higher than the uniformly doped C-PSC, due to the additional electric field introduced by the gradient doping. In addition, dividing the CH₃NH₃PbI₃ absorber simply into two layers with a doping gradient of 300 can also enhance the device performance of C-PSC significantly, which greatly simplifies the fabricating process. This research offers theoretical guidance for the design of high-performance C-PSCs for research and industry.

碳基钙钛矿太阳能电池（C-PSC）由于制造成本低，省去了空穴传输层（HTL）而结构简单，因而引起了极大的关注。但是，C-PCS的性能仍然落后于具有HTL的常规PSC。在这项工作中，提出了一种创新的带有梯度掺杂吸收剂的C-PSC，并通过SCAPS仿真进行了探索。分析了不同掺杂梯度，梯度掺杂吸收剂的平均掺杂含量和界面缺陷密度的影响。通过优化上述参数，在C-PSC中使用钙钛矿吸收剂的梯度掺杂可实现高于25％的效率，这比均匀掺杂的C-PSC高得多，这是由于引入了额外的电场通过梯度掺杂。另外，CH_将3 NH ₃ PbI ₃吸收剂简单地分为两层，掺杂梯度为300，也可以显着提高C-PSC的器件性能，从而大大简化了制造过程。这项研究为研究和工业界高性能C-PSC的设计提供了理论指导。