We report the growth and ferroelectric properties of epitaxial Aurivillius BaBi₄Ti₄O₁₅ (BBTO) thin films with complex crystal structures deposited via a pulsed laser deposition (PLD) method. The BBTO thin films tended to grow in the c-orientation on the Nb-doped (1 0 0) SrTiO₃ substrate. These highly c-oriented BBTO thin films could be grown by reducing the PLD deposition rate. The physical properties of the BBTO thin films were analyzed by measuring the leakage current, ferroelectric hysteresis loop, piezoelectric d₃₃ hysteresis loop, and fatigue. The leakage current characteristics were improved with the growth of the highly c-oriented BBTO thin films, but its ferroelectric polarizations were observed to be reduced owing to the crystal structure of BBTO. The study of the ferroelectric domain structures showed that the domain wall energy was increased by the growth of the highly c-oriented BBTO thin films.

我们报告通过脉冲激光沉积（PLD）方法沉积具有复杂晶体结构的外延Aurivillius BaBi ₄ Ti ₄ O ₁₅（BBTO）薄膜的生长和铁电性能。BBTO薄膜倾向于在c取向的Nb掺杂（1 0 0）SrTiO ₃衬底上生长。这些高度c取向的BBTO薄膜可以通过降低PLD沉积速率来生长。通过测量漏电流，铁电磁滞回线，压电d ₃₃磁滞回线和疲劳来分析BBTO薄膜的物理性能。随着c的增大，漏电流特性得到改善。取向的BBTO薄膜，但是由于BBTO的晶体结构，观察到其铁电极化降低。对铁电畴结构的研究表明，畴壁能量通过高度c取向的BBTO薄膜的生长而增加。