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Exploring the effect of the spacer structure in the heterocyclic ring-fused isoindigo-based conjugated polymer on the charge-transporting property
Journal of Polymer Research ( IF 2.6 ) Pub Date : 2021-01-16 , DOI: 10.1007/s10965-021-02417-0
Jian-Sian Li , Yen-Wen Huang , Yan-Cheng Lin , Fei-Hao Chen , Wen-Chang Chen , Chu-Chen Chueh

Isoindigo (IID) has been developed as an electron deficient moiety for high-performance conjugated organic materials, especially for constituting donor–acceptor (D-A) type conjugated polymers. To further enhance the planarity of IID unit to promote the associated intramolecular charge transfer (ICT) effect of the derived polymers, various of structural modifications have been performed in recent years. Herein, two heterocyclic ring-fused IID core structures, tetrafluorobenzene-centered IID (FBIID) and pyrazine-centered IID (PzIID), were developed and copolymerized with two common electron-rich moieties, 2,2′-bithiophene (2 T) and (E)-1,2-bis(thiophen-2-yl)ethene (TVT). The properties and structure-mobility relationship of the prepared four D-A type polymers, PFBIID-2 T, PFBIID-TVT, PPzIID-2 T, and PPzIID-TVT are systematically studied to elucidate the effect of the spacer structure in the heterocyclic ring-fused IID units. Both the simulation results and experimental analyses show that the PzIID-based polymers possess much higher planarity and mobility than the FBIID-based ones because of the less substituents on the pyrazine spacer, which reduces the steric hindrance within the structure. Finally, we show that the distinctly different planarity between FBIID and PzIID results in significantly different field-effect transistor (FET) mobility. Owing to the higher planarity and improved stacking and crystallinity of the polymer chains, the PzIID-derived polymers deliver much higher hole mobilities (μhs) of > 3 × 10 −4 (cm2 V−1 s−1) than the FBIID-derived polymers that show no conspicuous charge-transporting properties. This result clearly highlights the crucial role of the spacer structure in designing the heterocyclic ring-fused IID core structures.



中文翻译:

探索杂环稠合的异靛蓝共轭聚合物中间隔基结构对电荷传输性能的影响

Isoindigo(IID)已开发为高性能共轭有机材料的缺电子部分,尤其是用于构成供体-受体(DA)型共轭聚合物的电子。为了进一步增强IID单元的平面性以促进衍生的聚合物的相关的分子内电荷转移(ICT)作用,近年来已经进行了各种结构修饰。本文中,开发了两个杂环稠合的IID核心结构,即以四氟苯为中心的IID(FBIID)和以吡嗪为中心的IID(PzIID),并与两个常见的富电子部分2,2'-联噻吩(2 T)和(E)-1,2-双(噻吩-2-基)乙烯(TVT)。制备的四种DA型聚合物PFBIID-2 T,PFBIID-TVT,PPzIID-2 T的性质和结构迁移率关系 对PPzIID-TVT和PPzIID-TVT进行了系统研究,以阐明间隔结构在杂环稠合IID单元中的作用。仿真结果和实验分析均表明,基于PzIID的聚合物比基于FBIID的聚合物具有更高的平面度和迁移率,这是因为吡嗪间隔基上的取代基较少,从而降低了结构内的空间位阻。最后,我们表明FBIID和PzIID之间明显不同的平面度导致显着不同的场效应晶体管(FET)迁移率。由于聚合物链具有更高的平面度和改善的堆叠性和结晶度,PzIID衍生的聚合物可提供更高的空穴迁移率(仿真结果和实验分析均表明,基于PzIID的聚合物比基于FBIID的聚合物具有更高的平面度和迁移率,这是因为吡嗪间隔基上的取代基较少,从而降低了结构内的空间位阻。最后,我们表明FBIID和PzIID之间明显不同的平面度导致显着不同的场效应晶体管(FET)迁移率。由于聚合物链具有更高的平面度和改善的堆叠性和结晶度,PzIID衍生的聚合物可提供更高的空穴迁移率(仿真结果和实验分析均表明,基于PzIID的聚合物比基于FBIID的聚合物具有更高的平面度和迁移率,这是因为吡嗪间隔基上的取代基较少,从而降低了结构内的空间位阻。最后,我们表明FBIID和PzIID之间明显不同的平面度导致显着不同的场效应晶体管(FET)迁移率。由于聚合物链具有更高的平面度和改善的堆叠性和结晶度,PzIID衍生的聚合物可提供更高的空穴迁移率(我们表明,FBIID和PzIID之间明显不同的平面度导致显着不同的场效应晶体管(FET)迁移率。由于聚合物链具有更高的平面度和改善的堆叠性和结晶度,PzIID衍生的聚合物可提供更高的空穴迁移率(我们表明,FBIID和PzIID之间明显不同的平面度导致显着不同的场效应晶体管(FET)迁移率。由于聚合物链具有更高的平面度和改善的堆叠性和结晶度,PzIID衍生的聚合物可提供更高的空穴迁移率(μ ħ多个)> 3×10 -4(厘米2 V -1 小号-1)比FBIID衍生的聚合物,其显示没有明显的电荷输送性质。该结果清楚地突出了间隔结构在设计杂环稠合的IID核心结构中的关键作用。

更新日期:2021-01-18
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