Poly(vinylidene fluoride)-passivated CsPbBr3 perovskite quantum dots with near-unity photoluminescence quantum yield and superior stability,Journal of Materials Chemistry C

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Poly(vinylidene fluoride)-passivated CsPbBr3 perovskite quantum dots with near-unity photoluminescence quantum yield and superior stability
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-12-23 , DOI: 10.1039/d0tc05103a
Lin Yang _{1,

2,

3,

4} , Bowen Fu _{1,

2,

3,

4} , Xu Li _{1,

2,

3,

4} , Hao Chen _{1,

2,

3,

4} , Lili Li _{1,

2,

3,

4}

Affiliation

All inorganic perovskite quantum dots (QDs) have received great attention owing to their excellent performance in optoelectronic applications. However, they often suffer from defect-related photoluminescence (PL) quenching and phase transformation due to the loss of long-chain organic ligands, such as oleic acid (OA) and oleylamine (OAm). Here, we fabricated CsPbBr₃ QDs by a one-step microwave method, in the presence of α-phase poly(vinylidene fluoride) (PVDF) acing as the surface capping ligands. The PVDF-CsPbBr₃ QDs display a photoluminescence quantum yield (PLQY) of up to 98% (much higher than pristine QDs with OA/OAm as capping ligands), excellent stability in the desired cubic phase structure, and enhanced photoluminescence stability under ambient conditions. Using the as-prepared QDs as a light emitter, the efficient green perovskite quantum-dot light-emitting diode (QLED) with an external quantum efficiency (EQE) of 1.71% was prepared, exhibiting a peak luminance of 5711 cd m⁻² at 516 nm. Theoretical calculations indicate that there exists a much stronger interaction between the CsPbBr₃(001) surface and PVDF as compared to OA/OAm ligands, further explicating sufficient surface passivation with the introduced PVDF ligand.

中文翻译：

聚偏氟乙烯钝化的CsPbBr3钙钛矿量子点，具有近统一的光致发光量子产率和出色的稳定性

所有无机钙钛矿量子点（QD）由于其在光电应用中的出色性能而受到广泛关注。但是，由于长链有机配体（例如油酸（OA）和油胺（OAm））的损失，它们经常遭受与缺陷相关的光致发光（PL）猝灭和相变的困扰。在这里，我们以α-相聚偏二氟乙烯（PVDF）作为表面封盖配体，通过一步微波法制备了CsPbBr ₃ QD。PVDF-CsPbBr ₃QD的光致发光量子产率（PLQY）高达98％（大大高于以OA / OAm作为封端配体的原始QD），所需立方相结构的出色稳定性以及在环境条件下增强的光致发光稳定性。使用制备的QD作为发光体，制备了具有1.71％的外部量子效率（EQE）的高效绿色钙钛矿量子点发光二极管（QLED），其峰值亮度为5711 cd m ^-2。 516纳米理论计算表明，与OA / OAm配体相比，CsPbBr ₃（001）表面与PVDF之间存在更强的相互作用，进一步说明了引入的PVDF配体具有足够的表面钝化作用。

更新日期：2021-01-15

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