In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO₃ films and their photovoltaic response at visible light, the polarization of suitably written domains can be reversed under illumination. We exploit this effect to trigger and measure the associate change of resistance in tunnel devices. We show that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 10³%, and a robust electric and optic cycling of the device can be obtained mimicking the operation of a memory device under dual control of light and electric fields.

在寻找节能且快速的存储元件的过程中，光控铁电存储器是有希望的候选者。在这里，我们表明，通过利用纳米 BaTiO ₃薄膜中存在的压印电场及其在可见光下的光伏响应，适当写入域的偏振可以在照明下反转。我们利用这种效应来触发和测量隧道设备中电阻的相关变化。我们表明，通过插入辅助介电层来设计器件结构，电阻增加了接近 2 × 10 ³ %，并且可以获得器件稳健的电和光循环，模拟双重控制下存储器件的操作的光场和电场。