In order to better cover the frequency band of fifth‐generation communication system in sub‐6GHz frequency, a feeding capacitance compensation method is proposed to improve the bandwidth and efficiency of power amplifier (PA). By adding different feeding capacitance at the drain supply voltage network, resonance valley points occurred at different frequencies are compensated to achieve wide bandwidth and high‐efficiency. For validation purpose, a PA prototype is designed with using a 10‐W Cree GaN high electron mobility transistor device. Maximum 64.7% efficiency has been measured over 80% bandwidth from 2.2 to 5.1 GHz, with maximum output power of 13.5 W. The measurement revealed an adjacent channel leakage ratio of better than −50.3 dBc after digital pre‐distortion while being driven with a 40‐MHz orthogonal frequency‐division multiplexing modulated signal with a peak‐to‐average power ratio of 6.5 dB at an average output power of 32.5 dBm.

中文翻译：

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基于馈电电容补偿方法的宽带GaN HEMT功率放大器

为了更好地覆盖低于6GHz频率的第五代通信系统的频带，提出了一种馈电电容补偿方法，以提高功率放大器（PA）的带宽和效率。通过在漏极电源电压网络上增加不同的馈电电容，可以补偿在不同频率下出现的谐振谷点，从而实现宽带宽和高效率。为了验证目的，设计了一个PA原型，该原型使用10-W Cree GaN高电子迁移率晶体管器件。在2.2至5.1 GHz的80％带宽上测得的最大效率为64.7％，最大输出功率为13.5W。该测量显示相邻通道的泄漏比优于-50。