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High‐Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells
Solar RRL ( IF 6.0 ) Pub Date : 2021-01-15 , DOI: 10.1002/solr.202000534 José M. V. Cunha 1, 2, 3 , Kevin Oliveira 1 , Jackson Lontchi 4 , Tomás S. Lopes 1, 5, 6, 7 , Marco A. Curado 1, 8 , João R. S. Barbosa 1 , Carlos Vinhais 1, 9 , Wei-Chao Chen 10 , Jérôme Borme 1 , Helder Fonseca 1 , João Gaspar 1 , Denis Flandre 4 , Marika Edoff 10 , Ana G. Silva 11 , Jennifer P. Teixeira 1 , Paulo A. Fernandes 1, 2, 12 , Pedro M. P. Salomé 1, 2, 12
Solar RRL ( IF 6.0 ) Pub Date : 2021-01-15 , DOI: 10.1002/solr.202000534 José M. V. Cunha 1, 2, 3 , Kevin Oliveira 1 , Jackson Lontchi 4 , Tomás S. Lopes 1, 5, 6, 7 , Marco A. Curado 1, 8 , João R. S. Barbosa 1 , Carlos Vinhais 1, 9 , Wei-Chao Chen 10 , Jérôme Borme 1 , Helder Fonseca 1 , João Gaspar 1 , Denis Flandre 4 , Marika Edoff 10 , Ana G. Silva 11 , Jennifer P. Teixeira 1 , Paulo A. Fernandes 1, 2, 12 , Pedro M. P. Salomé 1, 2, 12
Affiliation
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Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiOx) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 °C, the SiOx passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade‐off between passivation effect and charge extraction, as demonstrated by the trade‐off between open‐circuit voltage (Voc) and short‐circuit current density (Jsc) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiOx as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high‐performance and low‐cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiOx as a passivation material for energy conversion devices.
中文翻译：
高性能和工业上可行的纳米结构SiOx层，用于薄膜太阳能电池的界面钝化
在此，通过使用工业技术证明，具有基于氧化硅（SiO x）的纳米接触的钝化层导致超薄Cu（In，Ga）Se 2（CIGS）太阳能电池的光电性能的显着改善。两种方法用于钝化层的接触图案化：点接触和线接触。对于550和500°C的两种CIGS生长条件，SiO x钝化层显示出正的钝化特性，这在电气仿真中得到了支持。与非钝化参考器件相比，这种积极影响导致钝化器件的光功率转换效率值提高了2.6％（绝对值）。令人惊讶的是，两种钝化体系结构都具有相似的效率值。但是，钝化效果和电荷提取之间存在一个折衷，这可以通过开路电压（V oc）和短路电流密度（J sc）与填充因数（FF）的折衷来证明。首次采用SiO x的完全工业可升级工艺作为通过化学气相沉积法沉积的后钝化层以及用于线接触的光刻技术，可实现高性能和低成本超薄CIGS太阳能电池的有希望的结果，其冠军器件的效率值达到12％，证明了SiO x作为钝化剂的潜力能量转换设备的材料。
更新日期：2021-03-10
中文翻译：
高性能和工业上可行的纳米结构SiOx层，用于薄膜太阳能电池的界面钝化
在此，通过使用工业技术证明，具有基于氧化硅（SiO x）的纳米接触的钝化层导致超薄Cu（In，Ga）Se 2（CIGS）太阳能电池的光电性能的显着改善。两种方法用于钝化层的接触图案化：点接触和线接触。对于550和500°C的两种CIGS生长条件，SiO x钝化层显示出正的钝化特性，这在电气仿真中得到了支持。与非钝化参考器件相比，这种积极影响导致钝化器件的光功率转换效率值提高了2.6％（绝对值）。令人惊讶的是，两种钝化体系结构都具有相似的效率值。但是，钝化效果和电荷提取之间存在一个折衷，这可以通过开路电压（V oc）和短路电流密度（J sc）与填充因数（FF）的折衷来证明。首次采用SiO x的完全工业可升级工艺作为通过化学气相沉积法沉积的后钝化层以及用于线接触的光刻技术，可实现高性能和低成本超薄CIGS太阳能电池的有希望的结果，其冠军器件的效率值达到12％，证明了SiO x作为钝化剂的潜力能量转换设备的材料。
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