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A p‐p+ Homojunction‐Enhanced Hole Transfer in Inverted Planar Perovskite Solar Cells
ChemSusChem ( IF 7.5 ) Pub Date : 2021-01-14 , DOI: 10.1002/cssc.202100083 Jian Song 1 , Liang Zhao 1 , Sheng Huang 1 , Xinfeng Yan 1 , Qinyuan Qiu 1 , Yulong Zhao 1 , Lei Zhu 1 , Yinghuai Qiang 1 , Hongshi Li 2 , Guoran Li 3
ChemSusChem ( IF 7.5 ) Pub Date : 2021-01-14 , DOI: 10.1002/cssc.202100083 Jian Song 1 , Liang Zhao 1 , Sheng Huang 1 , Xinfeng Yan 1 , Qinyuan Qiu 1 , Yulong Zhao 1 , Lei Zhu 1 , Yinghuai Qiang 1 , Hongshi Li 2 , Guoran Li 3
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Perovskite solar cells (PSCs) have triggered a research trend in solar energy devices in view of their high power conversion efficiency and ease of fabrication. However, more delicate strategies are still required to suppress carrier recombination at charge transfer interfaces, which is the necessary path to high‐efficiency solar cells. Here, a p–p+ homojunction was constructed on basis of NiO film to enhance hole transfer in an inverted planar perovskite solar cell. The homojunction was generated by fabricating a NiO/Cu:NiO bilayer film. The density functional theory calculation demonstrated the charge density difference in the two layers, which could generate a space charge region and a band bending at the junction, and the result was further proved by energy level structure analysis of NiO and Cu:NiO films. The designed homojunction could accelerate the hole transfer and inhibit carrier recombination at the interface between hole transfer layer and perovskite layer. Finally, the inverted planar perovskite solar cell with p–p+ homojunction showed an efficiency of 18.30 % and a high fill factor of 0.81, which were much higher than the counterpart of the PSCs individually using NiO or Cu:NiO as hole transfer layer. This work developed a new structure of hole transport layer to enhance the performance of PSCs, and also provided new ideas for design of charge transfer films.
中文翻译：
反向平面钙钛矿太阳能电池中的p-p +同质结增强空穴传输
鉴于钙钛矿太阳能电池（PSC）的高功率转换效率和易于制造，已经引发了太阳能设备的研究趋势。但是，仍然需要更精细的策略来抑制电荷转移界面处的载流子复合，这是通往高效太阳能电池的必经之路。在这里，ap–p +在NiO膜的基础上构造同质结以增强倒置平面钙钛矿太阳能电池中的空穴传输。通过制造NiO / Cu：NiO双层膜来产生同质结。密度泛函理论计算证明了两层电荷密度的差异，这会在连接处产生空间电荷区和带弯曲，并且通过NiO和Cu：NiO薄膜的能级结构分析进一步证明了这一结果。设计的同质结可以促进空穴传输，并抑制空穴传输层与钙钛矿层之间界面处的载流子复合。最后，具有p–p +的倒置平面钙钛矿太阳能电池同质结的效率为18.30％，填充系数为0.81，远高于单独使用NiO或Cu：NiO作为空穴传输层的PSC的等效结。这项工作开发了一种新的空穴传输层结构，以增强PSC的性能，也为电荷转移膜的设计提供了新思路。
更新日期：2021-03-07
中文翻译：
反向平面钙钛矿太阳能电池中的p-p +同质结增强空穴传输
鉴于钙钛矿太阳能电池（PSC）的高功率转换效率和易于制造，已经引发了太阳能设备的研究趋势。但是，仍然需要更精细的策略来抑制电荷转移界面处的载流子复合，这是通往高效太阳能电池的必经之路。在这里，ap–p +在NiO膜的基础上构造同质结以增强倒置平面钙钛矿太阳能电池中的空穴传输。通过制造NiO / Cu：NiO双层膜来产生同质结。密度泛函理论计算证明了两层电荷密度的差异，这会在连接处产生空间电荷区和带弯曲，并且通过NiO和Cu：NiO薄膜的能级结构分析进一步证明了这一结果。设计的同质结可以促进空穴传输，并抑制空穴传输层与钙钛矿层之间界面处的载流子复合。最后，具有p–p +的倒置平面钙钛矿太阳能电池同质结的效率为18.30％，填充系数为0.81，远高于单独使用NiO或Cu：NiO作为空穴传输层的PSC的等效结。这项工作开发了一种新的空穴传输层结构，以增强PSC的性能，也为电荷转移膜的设计提供了新思路。
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