Simultaneous Incorporation of Two Types of Azo‐Groups in the Side Chains of a Conjugated D–A Polymer for Logic Control of the Semiconducting Performance by Light Irradiation,Advanced Materials

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Simultaneous Incorporation of Two Types of Azo‐Groups in the Side Chains of a Conjugated D–A Polymer for Logic Control of the Semiconducting Performance by Light Irradiation
Advanced Materials ( IF 27.4 ) Pub Date : 2021-01-14 , DOI: 10.1002/adma.202005613
Jianwu Tian _{1,

2} , Zitong Liu ₁ , Changchun Wu ₁ , Wenlin Jiang _{1,

2} , Liangliang Chen _{1,

2} , Dandan Shi _{1,

2} , Xisha Zhang _{1,

2} , Guanxin Zhang ₁ , Deqing Zhang _{1,

2}

Affiliation

A new design strategy for photoresponsive semiconducting polymer with tri‐stable semiconducting states is reported by simultaneous incorporation of tetra‐ortho‐methoxy‐substituted azobenzene (mAzo) and arylazopyrazole (pAzo) in the side chains. The trans‐to‐cis transformations for mAzo and pAzo groups can sequentially occur within the polymer thin film after sequential 560 and 365 nm light irradiation. Remarkably, the trans–cis isomerization of mAzo and pAzo groups can modulate the thin film crystallinity. Accordingly, the performances of the resulting field‐effect transistors (FETs) can be reversibly modulated, leading to tri‐stable semiconducting states after sequential 560, 365, and 470 nm light irradiation. Therefore, the device performance can be logically controlled by light irradiation at three different wavelengths. In addition, with light irradiation and device current as the input and output signals, the three‐value logic gate by using single FET device can be successfully mimicked.

中文翻译：

在共轭D–A聚合物的侧链中同时掺入两种类型的偶氮基团，以通过光辐照来逻辑控制半导体性能

对于新的设计策略的光响应半导体聚合物与三稳定半导体状态是通过同时掺入报告四-邻位侧链甲氧基取代的偶氮苯（梅佐）和arylazopyrazole（PAZO）。在连续560和365 nm的光辐照后，mAzo和pAzo基团的反式至顺式转换可在聚合物薄膜中依次发生。值得注意的是，反式mAzo和pAzo基团的异构化可以调节薄膜的结晶度。因此，可以对产生的场效应晶体管（FET）的性能进行可逆调制，从而在顺序进行560、365和470 nm的光辐照后导致三稳态半导体状态。因此，可以通过三种不同波长的光照射在逻辑上控制设备性能。此外，以光照射和器件电流作为输入和输出信号，可以成功地模仿使用单个FET器件的三值逻辑门。

更新日期：2021-02-22

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